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Silicon-on-insulator technologies are well suited for high temperature circuit design, due to low leakage currents. The reduction of leakage currents is especially important in large repetitive structures such as memories. This paper describes the layout development of a high temperature SRAM cell in a SOI Technology. First, the differences between SOI technologies and standard CMOS processes are presented. It is then discussed, how SOI specific circuit element behavior affects the layout design of different parts of the SRAM cell. Solutions for SOI specific problems are presented and advantages and disadvantages of SOI technologies in static random access memory design are shown.