Embedded memory and ARM Cortex-M0 core using 60-nm C-axis aligned crystalline indium-gallium-zinc oxide FET integrated with 65-nm Si CMOS

Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence

“… DOSRAM module with stacked Si and OSFET s: (A) cross section, (B) chip micrograph, and (C) circuit diagram of memory cell…”

“…The prototype is a CPU‐embedded 8‐kB DOSRAM . The DOSRAM has an operating frequency of 30 MHz that is applied to CPU, and its data retention time is more than 1 hour.…”

“…The prototype is a CPU-embedded 8-kB DOSRAM. 33 The DOSRAM has an operating frequency of 30 MHz that is applied to CPU, and its data retention time is more The DOSRAM module's operating frequency and retention time were estimated based on its design and characteristics of a single OSFET.…”

P‐1.11: Relationship between Effective Mobility and Source/Drain Resistance in Self‐Aligned Top‐Gate a‐IGZO Thin Film Transistors

“…In recent years, high-performance a-IGZO TFTs are expected to be important for applications to the future microelectronics [1,2,3], because of their high mobility, low processing temperature, and large area uniformity [4,5]. Compare to conventional staggered bottom-gate structure, self-aligned top-gate structure has a low parasitic capacitance which leads to a smaller signal delay and increases the operating speed of circuits [6,7].…”

16‐1: Low‐Power Oxide‐Semiconductor Display System

“…Examples of OS LSI in which nonvolatile memory elements are built with OS-FETs exhibiting ultralow off-state current include normally-off (N-off) processors [9][10][11], nonvolatile FPGAs (OS FPGA) [12][13][14][15][16], nonvolatile oxide semiconductor random access memory (NOSRAM) [17,18], dynamic oxide semiconductor random access memory (DOSRAM) [19], a global-shutter image sensor [20], and a vision sensor [21]. The possibility of device scaling has been verified [22], and prototyping of OS LSI using a foundry's 65-nm Si process has been reported previously [23,24].…”