Embedded Select in Trench Memory (eSTM), best in class 40nm floating gate based cell: a process integration challenge

Gate stress reliability of a novel trench-based Triple Gate Transistor

“…The TGT is integrated in a Non-Volatile Memory environment and designed following the process flow of an embedded NOR Flash technology [6]. No additional steps or masks are required to fabricate the device.…”

Morphology and reliability aspects of 40 nm eSTM™ architecture

“…Embedded scaled applications are increasing and push the evolvement of charge storage memory [1]. To address this topic, the embedded Select in Trench Memory (eSTM™) has been presented [2] [3]. As a 40 nm split-gate memory optimizing costs, area, and performances, the eSTM TM cell is a serious candidate to apply for low consumption and high reliability markets.…”