Embedded SRAM and Cortex-M0 Core Using a 60-nm Crystalline Oxide Semiconductor

Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence

“…Due to the extremely low off‐state current ( I off ), metal‐oxide‐semiconductor field‐effect transistors (MOSFETs), including a crystalline oxide semiconductor CAAC‐IGZO (OSFET), can realize devices with significantly lower power consumption as compared to state‐of‐the‐art Si‐based devices. For instance, we have discovered that an OSFET with channel length ( L )/channel width ( W ) of 0.8 μm/100 mm demonstrates an extremely low I off of 6 yA/μm (10 −24 A/μm), which had not been achieved previously …”

“…As mentioned previously, CAAC‐IGZO has an extremely low I off. This feature helps realize memory that utilizes OSFETs with long retention time and a logic circuit with OSFETs that performs normally off operation; that is, the power is interrupted in a standby state …”

“…This feature helps realize memory that utilizes OSFETs with long retention time and a logic circuit with OSFETs that performs normally off operation; that is, the power is interrupted in a standby state. 3,11 F I G U R E 1 Hardware and software configuration for artificial intelligence (AI) Memory access occurs frequently in AI operations. However, nonvolatile memory including other materials, such as resistive RAM (ReRAM) 12 and magnetoresistive RAM (MRAM), 13 has poor write endurance.…”

“…For instance, we have discovered that an OSFET with channel length (L)/channel width (W) of 0.8 μm/100 mm demonstrates an extremely low I off of 6 yA/μm (10 −24 A/μm), which had not been achieved previously. 3 c-Axis-aligned crystalline indium-gallium-zinc oxide has been employed in various mass-produced display devices and is now anticipated to be a new material for display that would replace Si as a semiconductor material. In the large-scale integration (LSI) field, the emerging artificial intelligence (AI) era will require extremely low-power devices.…”

16‐1: Low‐Power Oxide‐Semiconductor Display System

“…OS-FETs have been applied to LSI as well as displays [8]. Examples of OS LSI in which nonvolatile memory elements are built with OS-FETs exhibiting ultralow off-state current include normally-off (N-off) processors [9][10][11], nonvolatile FPGAs (OS FPGA) [12][13][14][15][16], nonvolatile oxide semiconductor random access memory (NOSRAM) [17,18], dynamic oxide semiconductor random access memory (DOSRAM) [19], a global-shutter image sensor [20], and a vision sensor [21]. The possibility of device scaling has been verified [22], and prototyping of OS LSI using a foundry's 65-nm Si process has been reported previously [23,24].…”