Emergent 
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 Noise in Ensembles of Random Telegraph Noise Oscillators

Costanzi, Barry N.; Dahlberg, E. Dan

doi:10.1103/physrevlett.119.097201

“…The lag plot clearly shows the correlation behaviour and fractal nature of the two charge traps. We also observed the crossover between RTN and 1/f noise, which was previously reported to be observed in magnetic nanodot system 45 , as shown in the Supplementary information.…”

Section: Discussionsupporting

confidence: 82%

Random telegraph noise from resonant tunnelling at low temperatures

Li

¹

,

Sotto

²

,

Liu

³

et al. 2018

Sci Rep

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The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be investigated due to the difficulty to find out the exact device, which shows the RTN feature over statistical variations. Here, we show the RTN can be observed from virtually all devices at low temperatures, and provide a methodology to enable a systematic way to identify the bias conditions to observe the RTN. We found that the RTN was observed at the verge of the Coulomb blockade in the stability diagram of a parasitic Single-Hole-Transistor (SHT), and we have successfully identified the locations of the charge traps by measuring the bias dependence of the RTN.

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“…The lag plot clearly shows the correlation behaviour and fractal nature of the two charge traps. We also observed the crossover between RTN and 1/f noise, which was previously reported to be observed in magnetic nanodot system 45 , as shown in the Supplementary information. Based on the information shown above, we could establish a physical model to describe the RTN1, as shown in Fig.…”

Section: Discussionsupporting

confidence: 82%

Random-telegraph-noise by resonant tunnelling at low temperatures

Li

¹

,

Sotto

²

,

Liu

³

et al. 2017

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

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The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be investigated due to the difficulty to find out the exact device, which shows the RTN feature over statistical variations. Here, we show the RTN can be observed from virtually all devices at low temperatures, and provide a methodology to enable a systematic way to identify the bias conditions to observe the RTN. We found that the RTN was observed at the verge of the Coulomb blockade in the stability diagram of a parasitic Single-Hole-Transistor (SHT), and we have successfully identified the locations of the charge traps by measuring the bias dependence of the RTN.Charge traps in advanced Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have been used for many important applications 1 in semiconductor industries. For example, a Metal-Oxide-NitrideOxide-Semiconductor (MONOS) memory device 2,3 has an advantage on a long retention time at high temperatures, which is suitable for an integrated microprocessor in a vehicle. An interface trap is also useful to extend the current plateau in a single electron pump 4 at low temperatures, which is a promising candidate for a redefinition of ampere to establish a new current standard based on an elementary charge in quantum metrology. On the other hand, charge traps also affect reliability problems 5,6 , such as Random Telegraph Noise (RTN) 7-11 and Negative Bias Temperature Instabilities (NBTI) 12 , causing failures of Static Random Access Memory (SRAM) cells and degradations of long term performance 13,14 . In particular, the impact of RTN is getting more important with the scaling [15][16][17] , since the variations [18][19][20] in an atomic level can affect the drain current in sub-20 nm MOSFETs. RTN is coming from the carrier trapping and de-trapping processes through charge traps at the gate insulator/Si interface, which are intrinsic quantum processes 21,22 . Quantum effects are not negligible in advanced MOSFETs, since the gate insulator is as thin as 1 nm 23 , and the direct tunnelling currents from the channel into the traps are expected due to enhanced coupling 24 . Previously, the most of the works on RTN were based on measurements at room temperatures [7][8][9][10][11]25,26 . At room temperatures, the thermal fluctuation significantly affect the carrier dynamics 27 , and it was difficult to identify the quantum energy levels of charge traps. By measuring the MOSFETs at low temperatures, it is easier to observe various quantum effects 28 . In our previous study, we have found current peaks at low temperatures in advanced Si MOSFETs 29 , but the mechanism of the peaks was not elucidated. In this paper, we characterised the peaks in time domain, and found that the current peaks are related to RTN. The bias conditions to observe the current peaks have b...

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“…Generally during first order phase transitions two different phases coexist, giving rise to domain formation [3][4][5][6][7][8][9]. Using nano-fabrication techniques it is possible to reduce the size of the devices to a scale comparable to that of the domains, confining the system thus reducing its dimensionality and unveiling novel effects not observed in bulk or thin films [1,2,5,[9][10][11][12][13][14]. One important such effect is the emergence of a resistive asymmetry across the first order transitions, which had previously been observed in VO 2 [1] and FeRh [2] nanowires.…”

Section: Introductionmentioning

confidence: 99%

Resistive asymmetry due to spatial confinement in first-order phase transitions

Valle

¹

,

Ghazikhanian

²

,

Kalcheim

³

et al. 2018

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We report an asymmetry in the R vs T characteristics across the first order metalinsulator transition (MIT) of V 2 O 3 nanowires. The resistance changes in a few, large jumps during cooling through the MIT, while it does it in a smoother way during warming. The asymmetry is greatly enhanced as the width of the nanowire approaches a characteristic domain size. Our results, together with previous reports in VO 2 [1] and FeRh [2] imply that asymmetry is a generic feature of first order phase transitions in 1D systems. We show that this behavior is a simple, elegant consequence of the combined effects of the transition hysteresis and the temperature dependence of the insulating gap in this case (and generically, the order parameter relevant for the physical observable). We conclude that our proposed asymmetry mechanism is universally applicable to many electronic first order phase transitions.

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Emergent 1/f Noise in Ensembles of Random Telegraph Noise Oscillators

Cited by 15 publications

References 30 publications

Random telegraph noise from resonant tunnelling at low temperatures

Random telegraph noise from resonant tunnelling at low temperatures

Random-telegraph-noise by resonant tunnelling at low temperatures

Resistive asymmetry due to spatial confinement in first-order phase transitions

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