Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

Abstract

With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

“…One‐ or few‐atom‐thick 2D layered materials (2DLMs), formed by lateral covalent bonds and vertical van der Waals (vdWs) forces, exhibit extraordinary electronic and optical properties1, 2, 3, 4, 5 and are therefore considered building blocks of next‐generation electronic devices. Recently, considerable research interest has been intrigued by the vertically stacked vdWs integration of various 2DLMs, which provides infinite possibilities by overcoming the limitation of lattice matching and processing compatibility 6, 7, 8, 9, 10, 11, 12, 13, 14.…”

Cytotoxicity of Group 5 Transition Metal Ditellurides (MTe2; M=V, Nb, Ta)

“…[14][15][16] Many TMDs possess al ayered structure akin to graphite, and within one layer of TMDs,t he transition metal is sandwiched between two chalcogens, hence resulting in the MX 2 stoichiometry.I th as been reported that the bonds within each layer are covalent, whereas the bonds between two different MX 2 layersa re typicallyh eld by van der Waals forces of interactions, thus allowing exfoliation of TMDs down to single layers. [9,[13][14][15][17][18][19] The unique and advantageous properties of TMDs,s uch as large surface area,t uneable band gaps, stability against photocorrosion,a nd low shear resistance due to weak van der Waals interactions between layers have attracted much research attention and led to numerous and diversified applications of TMDs. [13,14,20,21] Such applicationsi nclude electrocatalytic hydrogen evolution, high performance electrochemical supercapacitors, biosensors, field-effect transistors (FETs), photodetectors, heterostructure junctions, photovoltaics, and lubricant additives.…”

“…[9][10][11][12] TMDs have ag eneral chemical formula of MX 2 ,w hereby M represents at ransition metal (for instance Ti,V ,N b, Ta,M o, W, and so on) of a + 4o xidation state and Xi sachalcogen (S, Se, or Te)w ith a À2o xidation state . [9,13,14] Different permutations of thesee lements give rise to approximately6 0d ifferent TMDs, where two-thirds of these compounds are reported to assumel ayereds tructures. Generally,t ransition metals from Groups4 -7 generate compounds that are predominantly layered while some Group 8-10 transition metals give rise to three-dimensional crystal compounds.…”

“…[13,14,20,21] Such applicationsi nclude electrocatalytic hydrogen evolution, high performance electrochemical supercapacitors, biosensors, field-effect transistors (FETs), photodetectors, heterostructure junctions, photovoltaics, and lubricant additives. [5,9,13,14,[17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] In recent years, enormous efforts have been devotedt oe xplore the different applications of Group 5t ransition metal ditellurides, with VTe 2 being deemed to be ap romising hydrogen evolution reaction( HER) electrocatalyst, [33] NbTe 2 being reported to be an excellent lubricant additive, [20] and Ta Te 2 having potential applicationsa sasupercapacitor. [34] Howevert od ate, little has been known of the potentialt oxicities posed by Group 5t ransition metal ditellurides.There is still much to address for the understanding of the toxicologicalb ehaviour of TMD materials,especially for bulk Group 5t ransition metal ditelluride TMDs,w hich,t oo ur knowledge has yet to be determined.…”

“…[2][3][4][5][6][7][8] Among2 Dn anomaterials, TMDs are deemed to be one of the most studied layered compounds due to their extraordinary electrochemical properties. [9][10][11][12] TMDs have ag eneral chemical formula of MX 2 ,w hereby M represents at ransition metal (for instance Ti,V ,N b, Ta,M o, W, and so on) of a + 4o xidation state and Xi sachalcogen (S, Se, or Te)w ith a À2o xidation state . [9,13,14] Different permutations of thesee lements give rise to approximately6 0d ifferent TMDs, where two-thirds of these compounds are reported to assumel ayereds tructures.…”