Thermoelectric
materials, which can convert heat into electricity
and vice versa, have essential applications in power generation, thermocouples,
sensors, and cooling. In the past decade, a lot of research has been
devoted to developing various oxide-based thermoelectric materials,
for mid- to high-temperature applications, ensuring robustness, long
lifetimes, and low production costs. Among these oxide materials,
one popular class is oxychalcogenides. A comprehensive discussion
on the structural, electronic, and thermoelectric properties of both
p-type and n-type oxychalcogenides is presented in this review article.
The alternatively stacked conducting and insulating layers in these
oxychalcogenides combined with a unique bonding network lead to interesting
electronic properties and intrinsically low thermal conductivity.
The article focuses primarily on Bi-based oxychalcogenides which have
shown relatively good thermoelectric performance in the mid- to high-temperature
range, with an elaborate discussion on n-type compositions. Several
approaches such as chemical doping, modulation doping, introducing
vacancies, band structure engineering, and so forth are summarized,
vastly improving the zT in these materials and enabling their potential
viability for thermoelectric applications. Finally, we discuss a few
strategies as a future direction to further enhance the thermoelectric
performance in these oxychalcogenide materials.