No abstract

Bismuth-based binary compounds, including Bi2Se3 and Bi2Te3, have attracted increasing attention as well-known topological insulators. On the other hand, bismuth-based ternary compounds exhibit diverse properties, such as, ultrahigh carrier mobility, and strong Rashba spin splitting. Moreover, they boast of superior photocatalytic properties, implying great potential to be used in a wide range of applications. The unique structure and properties of two-dimensional (2D) materials, especially the extraordinary electronic and optical properties of 2D Bi2O2Se, have given rise to significant research interests for the exploration of 2D bismuth-based ternary compounds. In this review, we will comprehensively discuss the properties of three important families of bismuth-based ternary compounds, including Bi2O2X (X = S, Se, Te), BiTeX (X = Cl, Br, I), and BiOX (X = Cl, Br, I). In particular, we have placed emphasis on the latest progress in their 2D forms, including their novel properties and applications. This review would aid in understanding the superior performance of bismuth-based ternary compounds and offer a perspective for future research on these emerging 2D materials.

ZnO/Ni3ZnC0.7/x% CNT (x = 0, 2, 5, 10) urchin-like structures have been synthesized using a facile method based on metal-organic frameworks (MOFs) and applied as the electromagnetic absorber. The results of the experiments demonstrate that the content of multi-wall carbon nanotubes (MWCNT) has a great influence on the absorbing performance of the hybrid material. Conduction loss, interfacial polarization and ferromagnetic resonance all contribute to the electromagnetic absorption. The urchin-like ZnO/Ni3ZnC0.7/5% CNT composite presents excellent absorbing properties. When the filler loading of ZnO/Ni3ZnC0.7/5% CNT composite in paraffin matrix is only 10 wt.%, a minimum reflection loss of −33.2 dB is achieved at a layer thickness of 4.9 mm.

The electric field control of Raman scattering for small molecules can be realized in direct semiconducting antimonene-based field effect transistor.

No abstract