Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry.

Hexagonal nanosheet of Bi 2 Te 3 single crystals with uniform morphology were facilely synthesized through a high yield solvothermal route at low temperature (180 °C). Xray diffraction, scanning electron microscope, transmission electron microscope, selected area electron diffraction, and high-resolution transmission electron microscope were employed to characterize the products. In this solvothermal process, ethylene glycol (EG) was used as both reducing agent and solvent to simplify the process. The reaction temperature and alkaline environment play important roles in the formation of Bi 2 Te 3 single crystals, and the morphology of the products can be influenced by the added surfactants. Nanosheets with uniform morphology were obtained when polyvinyl pyrrolidone (PVP) was used as surfactant. Transport properties of hot pressed bulk samples formed by the as-prepared nanosheets were investigated. Thermal conductivity of the hot pressed nanosheets was greatly reduced by up to 60%, compared to the melt sample, with an enhancement of Seebeck coefficient and a decrease of electrical conductivity.

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A memristor and artificial synapse based on a ZnO–phosphorene nano-heterojunction are demonstrated. The continuous internal resistance states and multi-wavelength response of the memristor are applied to emulate the functions of the artificial synapse including PPF, SRDP, STDP and STP to LTP transition.

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