2017
DOI: 10.1002/advs.201600435
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Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Abstract: Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry.

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Cited by 183 publications
(105 citation statements)
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“…The critical size of field effect transistors (FETs) is aggressively scaled down to the nanometer regime to acquire higher chip density, higher speed, and lower power consumption 3,4. Among the low‐dimensional materials, 2D layered materials5 such as graphene,6 black phosphorus (BP),7–9 and transition metal dichalcogenides (TMDCs)10 have been widely investigated for their potential development in future electronics and optoelectronics technology due to their unique physical, chemical, optical, and electronic properties. As carrier transport is confined in plane, 2D layered materials are considered as promising candidates for high‐mobility “tunnel‐electronic” devices.…”
Section: Introductionmentioning
confidence: 99%
“…The critical size of field effect transistors (FETs) is aggressively scaled down to the nanometer regime to acquire higher chip density, higher speed, and lower power consumption 3,4. Among the low‐dimensional materials, 2D layered materials5 such as graphene,6 black phosphorus (BP),7–9 and transition metal dichalcogenides (TMDCs)10 have been widely investigated for their potential development in future electronics and optoelectronics technology due to their unique physical, chemical, optical, and electronic properties. As carrier transport is confined in plane, 2D layered materials are considered as promising candidates for high‐mobility “tunnel‐electronic” devices.…”
Section: Introductionmentioning
confidence: 99%
“…[18,19,39,40] Very recently, our group has demonstrated an efficient, facile, and extremely fast (<12 min) production method for high-quality, FL-BP flakes using microwave-assisted LPE. [15,41] Zhang et al [15] were the first to report the preparation of BPQDs with an average size of 4.9 nm and lattice fringes of 0.34 nm (Figure 1l) and 0.52 nm (Figure 1m), which can be ascribed to the (021) and (020) planes of BP crystal, respectively. This straightforward method for phosphorene production does not involve the use of any surfactant or ultrasonication steps and is expected to facilitate future development of phosphorene research.…”
Section: Introductionmentioning
confidence: 99%
“…[27][28][29][30][31][32] Recently, binary metal-free heterostructures combining BP and CN have shown promise in photocatalytic H 2 evolution and reactive oxygen species generation. [2][3][4][5][6][7][8][9][10][11] Owing to the unique optical and electrical properties, BP holds large promise in the fields of energy and catalysis. The preparation of these materials relies on the growth and exfoliation of BP crystals and the production cost and complexity increase inevitably.…”
mentioning
confidence: 99%