Emerging Memory Devices: Assessment and Benchmarking

Marinella, Matthew; Zhirnov, V.V.

doi:10.1002/9781118958254.ch13

Cited by 5 publications

(3 citation statements)

References 93 publications

(154 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On one hand, it was shown (1) that memristors are immune to the thermal fluctuation downscaling limit and therefore are potentially scalable to sub-5nm dimensions. On the other hand, memristors are reshaping computing paradigms as one of the leading candidates for the future of computer memory (3)(4)(5), due to excellent speed (6), small size (7), low power consumption (8), and long endurance (9), as well as enabling entirely new approaches to computing circuitry such as threshold logic (10)(11) and neuromorphic computing (12)(13)(14). Accompanying the rapid progress in experimental demonstration of oxide memristors, a few relatively comprehensive models (15)(16)(17)(18)(19) have been published to enhance the understanding of switching physics in memristors.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices

et al. 2016

View full text Add to dashboard Cite

As CMOS technology approaches the end of its scaling, oxide-based memristors have become one of the leading candidates for post-CMOS memory and logic devices. To facilitate the understanding of physical switching mechanisms and accelerate experimental development of memristors, we have developed a three-dimensional fully-coupled electrical and thermal transport model, which captures all the important processes that drive memristive switching and is applicable for simulating a wide range of memristors. The model is applied to simulate the RESET and SET switching in a 3D filamentary TaOx memristor. Extensive simulations show that the switching dynamics of the bipolar device is determined by thermally-activated field-dominant processes: with Joule heating, the raised temperature enables the movement of oxygen vacancies, and the field drift dominates the overall motion of vacancies. Simulated current-voltage hysteresis and device resistance profiles as a function of time and voltage during RESET and SET switching show good agreement with experimental measurement.

show abstract

Section: Introductionmentioning

confidence: 99%

(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Redox random access memory (ReRAM), also known as resistive or memristive switching memory, has had a dramatic increase in research activity in the past several years due to the prospect of sub-10nm scaling, high endurance, low switching energy, and high switching speeds (1), (2). In addition, it shows promise for specialized applications including radiation hardened memory for space (3) and as a computational element (4).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Development, Characterization, and Modeling of a TaO_x ReRAM for a Neuromorphic Accelerator

et al. 2014

View full text Add to dashboard Cite

Resistive random access memory (ReRAM), or memristors, may be capable of significantly improving the efficiency of neuromorphic computing, when used as a central component of an analog hardware accelerator. However, the significant electrical variation within a single device and between devices degrades the maximum efficiency and accuracy which can be achieved by a ReRAM-based neuromorphic accelerator. In this report, the electrical variability is characterized, with a particular focus on that which is due to fundamental, intrinsic factors. Analytical and ab initio models are presented which offer insight into the factors responsible for this variability.

show abstract

“…Figure adapted from[2]. Switching: Electrochemical formation and dissolution of Ag or Cu filament • Cation motion (Ag or Cu) • Chalcogenide or oxide insulating layer • Switching depends on E-field direction • R/W current independent of device area• Switching: Valence change and migration of oxygen vacancies • HfOx, TaOx most common insulators • Oxygen vacancy motion • Switching depends on E-field direction • R/W current independent of device area • Switching: Thermochemical change in oxide valence state • Symmetric structure • NiOx most common material • Switching independent of E-field direction • R/W current independent of device area • Switching: Oxygen exange causes Schottky barrier height change at interface • Perovskite and insulating metal oxide • Switching depends on E-field direction • R/W currents depend linearly on area…”

mentioning

confidence: 98%

Emerging resistive switching memory technologies: Overview and current status

Marinella

2014

2014 IEEE International Symposium on Circuits and Systems (ISCAS)

Self Cite

View full text Add to dashboard Cite

Resistive memory technologies, in particular redox random access memory (ReRAM), are poised as one of the most prominent emerging memory categories to replace NAND flash and fill the important need for a Storage Class Memory (SCM). This is due to low switching energy, low current switching, high speed, outstanding endurance, scalability below 10 nm, and excellent back-end-of-line CMOS compatibility. Furthermore, the analog aspects of memristors have opened the door for many novel applications such as analog math accelerators and neuromorphic computers. This paper provides an overview of resistive memory technologies and their current status, with a focus on redox RAM (ReRAM).

show abstract

Emerging Memory Devices: Assessment and Benchmarking

Cited by 5 publications

References 93 publications

(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices

(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices

(Invited) Development, Characterization, and Modeling of a TaO_x ReRAM for a Neuromorphic Accelerator

Emerging resistive switching memory technologies: Overview and current status

Contact Info

Product

Resources

About

Emerging Memory Devices: Assessment and Benchmarking

Cited by 5 publications

References 93 publications

(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices

(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices

(Invited) Development, Characterization, and Modeling of a TaOx ReRAM for a Neuromorphic Accelerator

Emerging resistive switching memory technologies: Overview and current status

Contact Info

Product

Resources

About

(Invited) Development, Characterization, and Modeling of a TaO_x ReRAM for a Neuromorphic Accelerator