Emerging silicon carbide power electronics components

Zolper, J.C.

doi:10.1109/apec.2005.1452877

Cited by 36 publications

(16 citation statements)

References 12 publications

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“…The goal of the ongoing Defense Advanced Research Projects Agency (DARPA) Wide Band-gap Semiconductor Technology (WBST) High Power Electronics (HPE) program is to develop 10 kV, 100 A, 20 kHz class power semiconductor devices, therefore enabling future electric ships, more electric aircraft, and all electric combat vehicles [4,5,6]. DARPA (SSPS) for future Navy warships in the HPE Phase 3 program [7].…”

Section: Introductionmentioning

confidence: 99%

Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

Duong

Berning

Hefner

et al. 2007

APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition

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This paper presents a test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to test a single power switch and a single power diode for continuous or burst switching conditions up to 5 kV and 5 A. The test system includes a 4.5 kV to 5 kV boost converter to emulate a 22.5 kW hard switching power converter. An additional DC-DC converter is used to recover the power processed by the boost converter. The design criteria, simulation, and construction of the test system are discussed in this paper and the system operation is demonstrated using various high voltage devices including 4.5 kV Silicon IGBTs, 10-kV SiC MOSFETs and 15 kV stacked silicon diodes.

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Section: Introductionmentioning

confidence: 99%

Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

Duong

Berning

Hefner

et al. 2007

APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition

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“…Even a short wire bond has an inherent parasitic inductance that often dominates the total parasitic inductance of the entire loop [2]. These stray inductances do not affect the circuit if the switching frequencies are low enough.…”

Section: Requirements Of Silicon Carbide Packagingmentioning

confidence: 99%

“…SiC power devices have been predicted to have tremendous potential to be the next generation material in the semiconductor industry [1][2][3][19][20][21]. These devices have been shown to operate in extremely high ambient temperatures with very low degradation in performance [22].…”

Section: Trends In Wire Bonded Silicon Carbide Packagingmentioning

confidence: 99%

“…These have the benefits of enabling a high power density at high junction temperatures, coupled with faster switching speeds as compared with their silicon (Si) counterparts [1][2][3][4][5][6]. Thus far, silicon carbide (SiC) [1][2][3] and gallium nitride (GaN) [4][5][6] have been the materials of choice for most WBG modules. While GaN is the preferred choice in applications requiring <500 V, SiC excels in applications exceeding 900 V. SiC devices rated 900 V and above are available in chip sizes spanning just tens of square millimeters.…”

Section: Introductionmentioning

confidence: 99%

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High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Seal

Mantooth

2017

Energies

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This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.

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“…These advantages help to avoid the use of heatsinks improving switching frequency and reducing the switching losses with better stability against temperature [1][2][3][4]. The Power-MOS based on (SiC) is one of the devices ready to replace the actual Power-MOS silicon solution mainly in applications with high temperature and high current density like power converters.…”

Section: Introductionmentioning

confidence: 99%