Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption

Ochoa, D.; Polimeni, A.; Capizzi, M.; Patanè, A.; Henini, M.; Eaves, L.; Main, P. C.

doi:10.1016/s0022-0248(02)02402-8

Cited by 8 publications

(12 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Comparable results were obtained in Ref. 4. It should be noted, however, that they observed a 70 meV redshift for a lower growth temperature of 460°C while for a higher growth temperature of 500°C, again no significant changes were observed.…”

Section: Resultssupporting

confidence: 83%

“…3(c)] seems to provide tunability of the emission wavelength: there is a redshift of 70.8 meV between B00 and B80, and a blueshift of 9.9 meV between B80 and B120. This confirms the measurements of Ochoa et al 4 and indicates that the For B Ќ z, the energy shift is often found to deviate from the parabolic and linear behavior 7 as shown in Fig. 5 for B120 (the line is a guide to the eye).…”

Section: B "311…b Substratesupporting

confidence: 89%

“…For the structure with 120 s GI, we thus find a large extent of the exciton in the growth direction, and this is corroborated by a cross sectional TEM image of a simple QD in sample B120 with a diameter larger than 30 nm and a height around 12 nm. 4 A diameter of 30 nm is not exceptional, but the height is unusually large, a few nanometres being more typical. 3 This evolution of the dots may be caused by the diffusion of In and Ga atoms during the GI.…”

Section: B "311…b Substratementioning

confidence: 99%

“…Therefore, the dependence of the properties of the dots on growth conditions such as substrate orientation, and growth interruption, and growth temperature is studied by many groups. [2][3][4][5][6] Tilted substrates, in which the surface is other than ͑100͒, allow us to make use of extra parameters in the search for better technological structures because the natural roughness on high index substrates influences the dot formation and the electronic properties of the dots, such that the photoluminescence (PL) energy, the PL intensity, or the PL linewidth can change according to the substrate orientation. 2,3,5 A study of the QD growth on ͑n11͒B substrates has shown that ͑311͒B has the optimum degree of QD ordering and the greatest homogeneity in their size.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs∕GaAs quantum dots

Godefroo

Maes

Hayne

et al. 2004

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

We have used photoluminescence in pulsed ͑ഛ50 T͒ and dc ͑ഛ12 T͒ magnetic fields to investigate the influence of substrate orientation and growth interruption (GI) on the electronic properties of InAs/ GaAs quantum dots, grown by molecular beam epitaxy at 480°C. Dot formation is very efficient on the ͑100͒ substrate: electronic confinement is already strong without GI and no significant change in confinement is observed with GI. On the contrary, for the ͑311͒B substrate strong confinement of the charges only occurs after a GI is introduced. When longer GIs are applied the dots become higher.

show abstract

Section: Resultssupporting

confidence: 83%

Section: B "311…b Substratesupporting

confidence: 89%

Section: B "311…b Substratementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs∕GaAs quantum dots

Godefroo

Maes

Hayne

et al. 2004

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…[25][26][27] The QD size can be controlled by GI and a uniform QD ensemble can be obtained by a proper choice of the GI time. To investigate the effects of GI on the CQDs, samples with different GI time were grown.…”

Section: -2mentioning

confidence: 99%

Growth and characterization of InAs columnar quantum dots on GaAs substrate

Patriarche

Rossetti

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by molecular beam epitaxy was investigated. The CQDs were formed by depositing a 1.8 monolayer (ML) InAs seed dot layer and a short period GaAs/InAs superlattice (SL). It was found that the growth of the CQDs is very sensitive to growth interruption (GI) and growth temperature. Both longer GI and higher growth temperature impact the size dispersion of the CQDs, which causes the broadening of photoluminescence (PL) spectrum and the presence of the additional PL peak tails. By properly choosing the GI and the growth temperature, CQDs including GaAs (3 ML)/InAs (0.62 ML) SL with period number up to 35 without plastic relaxation were grown. The corresponding equivalent thickness of the SL is 41 nm which is two times higher than the theoretical critical thickness of the strained InGaAs layer with the same average In composition of 16%. The increase of the critical thickness is partially associated with the formation of the CQDs. Based on a five-stack CQD active region, laser diodes emitting around 1120 nm at room temperature were demonstrated, indicating a high material quality. CQDs with nearly isotropic cross section (20 nm×20 nm dimensions) were formed by depositing a 16-period GaAs (3 ML)/InAs (0.62 ML) SL on an InAs seed dot layer, indicating the feasibility of artificial shape engineering of QDs. Such a structure is expected to be very promising for polarization insensitive device applications, such as semiconductor optical amplifiers.

show abstract

Blueshifts of emission energy from InAs quantum dots in GaAs matrix due to narrowed interdot spacing: a token of the integrity of a nanostructure

et al. 2005

View full text Add to dashboard Cite

Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption

Cited by 8 publications

References 10 publications

Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs∕GaAs quantum dots

Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs∕GaAs quantum dots

Growth and characterization of InAs columnar quantum dots on GaAs substrate

Blueshifts of emission energy from InAs quantum dots in GaAs matrix due to narrowed interdot spacing: a token of the integrity of a nanostructure

Contact Info

Product

Resources

About