Emission of terahertz radiation from coupled plasmon-phonon modes in InAs

Hasselbeck, Michael P.; Stalnaker, D.; Schlie, L. A.; Rotter, T. J.; Stintz, A.; Sheik‐Bahae, Mansoor

doi:10.1103/physrevb.65.233203

Cited by 69 publications

(35 citation statements)

References 24 publications

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“…One should note that longitudinal modes of oscillation, such as bulk plasmons and longitudinal optical phonons, manifest themselves as nodes in the dielectric function (Kittel, 1995;Hasselbeck et al, 2002). For this reason, the inverse dielectric function, also known as the dielectric loss function 1= , is plotted.…”

Section: Ultrafast Dynamicsmentioning

confidence: 99%

Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy

et al. 2011

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Time-resolved, pulsed terahertz spectroscopy has developed into a powerful tool to study charge carrier dynamics in semiconductors and semiconductor structures over the past decades. Covering the energy range from a few to about 100 meV, terahertz radiation is sensitive to the response of charge quasiparticles, e.g., free carriers, polarons, and excitons. The distinct spectral signatures of these different quasiparticles in the THz range allow their discrimination and characterization using pulsed THz radiation. This frequency region is also well suited for the study of phonon resonances and intraband transitions in low-dimensional systems. Moreover, using a pump-probe scheme, it is possible to monitor the nonequilibrium time evolution of carriers and low-energy excitations with sub-ps time resolution. Being an all-optical technique, terahertz time-domain spectroscopy is contact-free and noninvasive and hence suited to probe the conductivity of, particularly, nanostructured materials that are difficult or impossible to access with other methods. The latest developments in the application of terahertz time-domain spectroscopy to bulk and nanostructured semiconductors are reviewed.

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Section: Ultrafast Dynamicsmentioning

confidence: 99%

Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy

et al. 2011

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“…This magnetic field influence had focused the attention of researchers on the photo-Dember effect, although some authors also pointed out a possible role of other phenomena such as bulk optical rectification [48], magneto-plasma waves [49], or coupled plasmon-phonon modes [50] in THz radiation from InAs surface. Possible influences of the surface electric field were usually written off due to a narrow band gap in InAs and potentially small band bending at the surface of this material.…”

Section: Indium Arsenidementioning

confidence: 99%

Semiconductor materials for ultrafast optoelectronic applications

Krotkus¹,

Bertulis²,

Adomavičius³

et al. 2009

Lithuanian J. Phys.

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The paper presents a review of experimental investigations of various semiconductor materials used for the development of ultrafast optoelectronic devices activated by femtosecond laser pulses that have been performed at the Optoelectronics Laboratory of the Semiconductor Physics Institute during the period from 1997 to 2008. Technology and physical characteristics of low-temperature-grown GaAs and GaBiAs layers as well as the effect of terahertz radiation from the femtosecond laser excited semiconductor surfaces are described and analysed.

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“…1999, Kono et al, 2000. Ignoring this phase information, Hasselbeck et al (Hasselbeck et al, 2002) used a broadband interferometric method with two 30 fs pump pulses directed at nearby regions in InAs to extract transient THz radiation signals interfering in the far field. The angle of incidence for the Ti:sapphire laser beams was 45° and the pump pulses exceeded the band gap by 1.2 eV.…”

Section: Femtosecond-scale Optics 154mentioning

confidence: 99%

“…By adjusting the time-delay between the pump pulses an interferogram is created, which could be Fourier transformed and analyzed in order to extract vital data regarding the hybrid modes. In (Kersting et al, 1997) a simple model is presented which can be used to calculate the power spectrum of the emitted THz radiation of the experiment, assuming homogeneous broadening (Hasselbeck et al, 2002);…”

Section: Femtosecond-scale Optics 154mentioning

confidence: 99%