EML Array fabricated by SAG technique monolithically integrated with a buried ridge AWG multiplexer

Xu, Jiangning; Liu, Song; Zhang, Zhike; J, An; Zhu, Hongtu; Wang, Wei

doi:10.1016/j.optlastec.2016.12.010

Cited by 13 publications

(4 citation statements)

References 18 publications

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“…In order to eradicate the lateral misalignment between the SOA and passive waveguides, a self-aligned procedure 28) is adopted for the fabrication of the device's waveguide structure. A SiO 2 mask including both the SOA strip pattern and passive waveguide pattern is defined on the wafer by RIE.…”

Section: -3mentioning

confidence: 99%

InP-based high-speed monolithic PIN photodetector integrated with an MQW semiconductor optical amplifier

Xiao¹,

Han²,

Ye³

et al. 2022

Jpn. J. Appl. Phys.

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We demonstrate an InP based high speed p-i-n photodetector monolithic integrated with MQW semiconductor optical amplifier. A butt-joint scheme is adopted to connect the SOA and evanescent wave photodetector. The chip allows separate design for SOA and PD and needs only two MOCVD growth steps, which promises high yield and reduced manufacturing cost. The fabricated 5×20 μm2 PD shows a low dark current of 300 pA at -3V. The optical gain bandwidth of the SOA is 50nm, covering whole c-band. Gain ripple of SOA is 0.5dB, indicating that internal parasitic reflectivity is negligible. For integrated chip with 500μm SOA, the on-chip gain and total chip responsivity at 1545 nm can reach 12.8 dB and 7.8 A/W respectively. Insertion loss of the butt-joint interface is estimated to be 1.05 dB/interface. Small signal 3dB bandwidth at -5V of the integrated chip reaches 20GHz, showing no deterioration compared to discrete PD.

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Section: -3mentioning

confidence: 99%

InP-based high-speed monolithic PIN photodetector integrated with an MQW semiconductor optical amplifier

Xiao¹,

Han²,

Ye³

et al. 2022

Jpn. J. Appl. Phys.

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“…At the same time, there are a number of topical tasks that require flexible control of AR spectral characteristics within a single heterostructure, implemented by local changes in the composition and thickness of the quantum-well ARs. Such tasks include the creation of photonic integrated circuits, when it is required to combine a number of active elements of various spectral properties (lasers, detectors, amplifiers, waveguides, and modulators) within a single monolithic structure [10][11][12], as well as the creation of multispectral laser sources, effectively operating in a wide spectral range, for example, for the wavelength division multiplexing [13][14][15], the formation of an absorption section for mode-locked lasers [16].…”

Section: Introductionmentioning

confidence: 99%

Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition

Shamakhov,

Slipchenko,

Nikolaev

et al. 2023

Nanomaterials

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We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980–990 nm emission wavelength). Selective area epitaxy of InGaAs quantum wells was performed on templates that had a patterned periodic structure consisting of a window (where epitaxial growth occurred) and a passive mask (where epitaxial growth was suppressed), each with a width of 100 µm for every element. Additionally, a selectively grown potential barrier layer was included, which was characterized by an almost parabolic curvature profile of the surface. We conducted a study on the influence of the curvature profile of the growth surface on the optical properties of InGaAs quantum wells and the spatial distribution of composition in an ultrawide window. Our results showed that, under fixed selective-area-epitaxy conditions, the composition of the InxGa1−xAs and the wavelength of the quantum-well emission changed across the width of the window. Our study demonstrates that increasing the curvature profile of the growth surface of highly strained quantum wells leads to a transition in the photoluminescence wavelength distribution profile across the window, from quasi-parabolic to inverted parabolic.

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“…High performance photonic integrated circuits (PICs) with multi-bandgap integration are enabled by the SAG technique [8], [9]. Recently, a 10 channels WDM transmitter on a single chip has been demonstrated over an 80 nm-wide wavelength range provided by a single epitaxial step and integration with passive devices [10]. SAG also has been integrated in a photonic platform to fabricate a DFB laser array over a 155 nm wavelength range [11].…”

Section: Introductionmentioning

confidence: 99%

Foundry Photonic Process Extension With Bandgap Tuning Using Selective Area Growth

Lemaître

Fortin

Lagay³

et al. 2019

IEEE J. Select. Topics Quantum Electron.

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EML Array fabricated by SAG technique monolithically integrated with a buried ridge AWG multiplexer

Cited by 13 publications

References 18 publications

InP-based high-speed monolithic PIN photodetector integrated with an MQW semiconductor optical amplifier

InP-based high-speed monolithic PIN photodetector integrated with an MQW semiconductor optical amplifier

Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition

Foundry Photonic Process Extension With Bandgap Tuning Using Selective Area Growth

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