Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InP

Grasse, Christian; Boehm, Gerhard; Mueller, Michael; Gruendl, T.; Meyer, Ralf; Amann, M.-C.

doi:10.1088/0268-1242/25/4/045018

Cited by 12 publications

(11 citation statements)

References 15 publications

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“…These are obtained from the fitting to the low temperature DBR reflectivity spectrum. They agree well with the values reported in the literature [ 97 , 98 , 99 , 100 ], including interpolation in the case of InGaAlAs material. The QD itself is modeled as a point dipole source.…”

Section: Methodssupporting

confidence: 91%

“…Fitting this dependence with the phenomenological Varshni formula shows discrepancies in the low and intermediate temperature range. This is typical for the low-dimensional structures [ 98 ] and points out that the changes in the energy bandgap are not the only effect influencing the emission energy. The determined α parameters are in the range of (0.24–0.38) meV/K ( Table 1 ).…”

Section: Resultsmentioning

confidence: 82%

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Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

et al. 2021

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We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD’s levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.

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Section: Methodssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 82%

Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

et al. 2021

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“…The emission energy of the InGaAlAs layer confirms that the Al content in the InGaAlAs layer must be lower than 12%, and Ga content is close to the nominal 37%, together with 51% of In. [16,17] Additionally, we confirm that the emission centered at 0.914 eV originates spatially from the DBR section. We achieve this by comparing emission from the top and bottom of the complete structure with the emission from the top side of the structure etched down to the DBR section (Figure 1b).…”

Section: Resultssupporting

confidence: 69%

Distributed Bragg Reflector–Mediated Excitation of InAs/InP Quantum Dots Emitting in the Telecom C‐Band

Musiał

Wasiluk

Gawełczyk

et al. 2023

Physica Rapid Research Ltrs

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Herein, it is demonstrated that optical excitation of InAs quantum dots (QDs) embedded directly in an InP matrix can be mediated via states in a quaternary compound constituting an InP/InGaAlAs bottom distributed Bragg reflector (DBR) and native defects in the InP matrix. It does not only change the carrier relaxation in the structure but could also lead to the imbalanced occupation of QDs with charge carriers, because the band structure favors the transfer of holes. Thermal activation of carrier transfer can be observed as an increase in the emission intensity versus temperature for excitation powers below saturation on the level of both an inhomogeneously broadened QD ensemble and single QD transitions. That increase in the QD emission is accompanied by a decrease in the emission from the InGaAlAs layer at low temperatures. Finally, carrier transfer between the InGaAlAs layer of the DBR and the InAs/InP QDs is directly proven by the photoluminescence excitation spectrum of the QD ensemble. The reported carrier transfer can increase the relaxation time of carriers into the QDs and thus be detrimental to the coherence properties of single and entangled photons. It is important to take it into account while designing QD‐based devices.

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“…It is important to select the best mole fraction (x) value for the compound semiconductor to satisfy the lattice matching between the different alloys [39,40]. The refractive index (n) and the extinction coefficient (k) of the compound semiconductor vary based on its mole fraction [41]. Thus, to achieve the best values of such parameters which enhance the solar cell performance,…”

Section: Al Mole Fraction Optimizationmentioning

confidence: 99%

Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

Salem

Saif

Shaker

et al. 2021

International Journal of Photoenergy

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In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided. Secondly, the used device simulator is calibrated with recent experimental results of an InGaP/GaAs DJ solar cell. After that, the optimization of the DJ solar cell performance is carried out for two different materials of the top window layer, AlGaAs and AlGaInP. For AlGaAs, the optimization is carried out for the following: aluminum (Al) mole fraction, top window thickness, top base thickness, and bottom BSF doping and thickness. The electrical performance parameters of the optimized cell are extracted: J SC = 18.23 mA / c m 2 , V OC = 2.33 V , FF = 86.42 % , and the conversion efficiency ( η c ) equals 36.71%. By using AlGaInP as a top cell window, the electrical performance parameters for the optimized cell are J SC = 19.84 mA / c m 2 , V OC = 2.32 V , FF = 83.9 % , and η c = 38.53 % . So, AlGaInP is found to be the optimum material for the InGaP/GaAs DJ cell top window layer as it gives 4% higher conversion efficiency under 1 sun of the standard AM1.5G solar spectrum at 300 K in comparison with recent literature results. All optimization steps and simulation results are carried out using the SLVACO TCAD tool.

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Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InP

Cited by 12 publications

References 15 publications

Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

Distributed Bragg Reflector–Mediated Excitation of InAs/InP Quantum Dots Emitting in the Telecom C‐Band

Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

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