Employ Present Five Masks Amorphous Silicon Thin-Film Transistor Design and Process Flow to Realize 5-in. InGaZnO Active-Matrix Liquid Crystal Display with Improved Stress Stability

Hung, Ming-Chin; Hsiao, Hsia-Tsai; Lin, Wei‐Ting; Tu, Chun‐Hao; Chang, Jow‐Ran; Chen, Po-Lun

doi:10.7567/jjap.50.03cb07

Cited by 4 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is shown that devices with N O treatment have better electrical stability than devices with O treatment during the DC stress. The stress result is quite consist with previous report that devices with N O treatment have better electrical stability [24]- [26] owing to the effect of repairing of device back channel defect [27], [28].…”

Section: Device Fabricationsupporting

confidence: 78%

Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors

Tai

Chiu

Chou

2013

J. Display Technol.

View full text Add to dashboard Cite

Abstract-In this work, wafer level TLP testing is applied to amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) to study the factors of their electrostatic discharge (ESD) robustness. Two kinds of TFTs with N O and O treatments are subject to the ESD test. It is found that the contact resistance of the TFTs, instead of the channel quality, dominates the ESD power for them to be damaged.Index Terms-Amorphous Indium-Gallium-Zinc Oxide thin film transistor (a-IGZO TFT), electrostatic discharge (ESD).

show abstract

Section: Device Fabricationsupporting

confidence: 78%

Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors

Tai

Chiu

Chou

2013

J. Display Technol.

View full text Add to dashboard Cite

show abstract

“…Transparent oxide-based thin-film transistors (TFTs), such as amorphous InGaZnO (α-IGZO) TFTs, have shown considerable potential for applications in flat, flexible, and transparent display devices, benefiting from their advantageous properties like high mobility, excellent uniformity, low processing temperature, and high optical transparency. [1][2][3][4][5] As a result, they have been practically used as pixel switches and current drivers in active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light-emitting diodes (AMOLEDs). [6,7] However, reliability remains a critical issue in α-IGZO TFTs, especially for applications under bias stress, light illumination, or other extreme working conditions.…”

Section: Introductionmentioning

confidence: 99%

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Zhang

et al. 2019

Chinese Phys. B

View full text Add to dashboard Cite

Self-heating effect in amorphous InGaZnO thin-film transistors remains a critical issue that degrades device performance and stability, hindering their wider applications. In this work, pulsed current-voltage analysis has been applied to explore the physics origin of self-heating induced degradation, where Joule heat is shortly accumulated by drain current and dissipated in repeated time cycles as a function of gate bias. Enhanced positive threshold voltage shift is observed at reduced heat dissipation time, higher drain current, and increased gate width. A physical picture of Joule heating assisted charge trapping process has been proposed and then verified with pulsed negative gate bias stressing scheme, which could evidently counteract the self-heating effect through the electric-field assisted detrapping process. As a result, this pulsed gate bias scheme with negative quiescent voltage could be used as a possible way to actively suppress self-heating related device degradation.

show abstract

Transparent Amorphous Oxide Semiconductor TFTs

Brotherton¹

2013

Introduction to Thin Film Transistors

View full text Add to dashboard Cite

Employ Present Five Masks Amorphous Silicon Thin-Film Transistor Design and Process Flow to Realize 5-in. InGaZnO Active-Matrix Liquid Crystal Display with Improved Stress Stability

Cited by 4 publications

References 9 publications

Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors

Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Transparent Amorphous Oxide Semiconductor TFTs

Contact Info

Product

Resources

About