Low dark current organic photodetectors (OPDs) with a conventional structure consisting of poly(3-hexylthiophene) and [6,6]-phenyl-C-butyric acid methyl ester (PCBM) as active layer have been fabricated by spray-coating. Tuning the thickness of active layer and thermal annealing process for the spray-coated OPDs results in a remarkable performance with a low dark current density ( J) of 2.90 × 10 A/cm at reverse bias of 1 V. The impact of thermal annealing on the performance of sprayed OPDs is also investigated by the impedance analysis for mechanistic understanding. Our results demonstrate that the optimization of PCBM cluster and interfacial contact between the active layer and the metal electrode tailored by thermal annealing, respectively, could effectively reduce the J and increase the sensitivity of sprayed OPDs. The control of PCBM cluster is more important than the interfacial contact between the layers for improving J. In addition, structural characterization of the active layer studied by synchrotron small-angle X-ray scattering technique reveals why the spray-coated process can achieve the lowest dark current due to the favorable structure.
The present five masks bottom gate and staggered amorphous silicon (a-Si) thin-film transistor (TFT) process flow is not suitable for indium–gallium–zinc-oxide (IGZO) TFT because of its vulnerability to post etching process during the source/drain pattern. Bottom gate and coplanar IGZO TFTs were made feasible through the reverse of second (channel layer) and third (source/drain electrodes) masks process flow to avoid etching damage problem. Besides, the post IGZO nitrous oxygen (N2O) plasma treatment was employed to improve the stress instability. On the basis of secondary ion mass spectrometry (SIMS) and X-ray spectroscopy (XPS) results, it is believed that the post N2O plasma treatment passivates the interface states and converts the inhomogeneous and low quality IGZO to the homogeneous and high quality IGZO. In the end, a 5-in. IGZO active-matrix liquid crystal display was demonstrated via five masks bottom gate and coplanar TFT configuration.
The organic thin film transistors (OTFTs) were fabricated and investigated in this study. Solution and photography technology were used for organic thin film formation and patterning. Also, the process temperatures were kept below 120 degree C for low temperature process development. Furthermore, the performances of OTFTs were investigated in this study, including electrical characteristics and reliability.
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