Temperature dependent responsivity of quantum dot infrared photodetectors

Insight into performance of quantum dot infrared photodetectors

“…6 Current gain. Current gain of QDIPs has been reported by many research groups and the reported values span a very broad range form 1 to 10 6 depending upon the material, applied bias, and temperature [18][19][20]. Recently published theory of diffusion and recombination in QDIPs explains the reported values of gain [15].…”

Confinement-enhanced dots-in-a-well QDIPs with operating temperature over 200K

“…To further probe the origin of the increase of responsivity, the device current gain was calculated assuming the G-R noise dominates, and the quantum efficiency was then separated from the responsivity [13]. Both the current gain and the quantum efficiency are shown in Fig.…”

III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

“…On the other hand, in the last few years, IIInitrides devices based on ISB transitions in QDs are potentially interesting especially for quantum-dot infrared photodetectors (QDIPs). The advantages of QDIPs, can mainly categorize in three parts [54]: (a) the 3D quantum confinement of the carriers, which results in the δ-function-like density of states, and high sensitivity to the normal incident radiation without the use of a grating or corrugations as is often done in QWIPs [55][56][57], (b) reduced electron-phonon scattering, which elongates the carrier lifetime, and high current gain [58][59][60], (c) high-temperature operations [61,62].…”