Empowering the Electronics Industry A Power Technology Roadmap

Quinn, Conor; Dalal, Dhaval

doi:10.24295/cpsstpea.2017.00028

Cited by 6 publications

(3 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Flyback type architectures dominate at lower power levels (below 100W) with two stage architectures accounting for higher power levels. The prototype based on the proposed architecture in this paper compares well with the other designs and industry expectations [22], and should provide a useful topology for PFC converter designers.…”

Section: Comparison With Existing Designsmentioning

confidence: 63%

An Isolated Power Factor Corrected Power Supply Utilizing the Transformer Leakage Inductance

Conway

2019

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

The widespread use of electronic devices increases the need for compact power factor corrected power supplies. This paper describes an isolated power factor corrected power supply that utilizes the leakage inductance of the isolation transformer to provide boost inductor functionality. The bulk capacitor is in the isolated part of the power supply allowing for controlled startup without dedicated surge limiting components. A control method based on switch timing and input/output voltage measurements is developed to jointly achieve voltage regulation and input power factor control. A prototype design is implemented with detailed measurements and waveforms shown to confirm the desired functionality.

show abstract

Section: Comparison With Existing Designsmentioning

confidence: 63%

An Isolated Power Factor Corrected Power Supply Utilizing the Transformer Leakage Inductance

Conway

2019

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

show abstract

“…They offer low losses at high frequencies and a decent saturation flux density (around 0.4 T for MnZn ferrites) at reasonable costs. With wide-band gap semiconductors, efficient converters with increasing switching frequencies beyond 100 kHz are enabled [2], which could lead to potential higher core losses in magnetic components. For minimizing the losses and optimally designing the converter and its magnetics, accurate models for the core losses are required [3].…”

Section: Introductionmentioning

confidence: 99%

Eddy Current Loss Model for Ferrite Ring Cores Based on a Meta-Material Model of the Core Properties

Dimier

Biela

2022

IEEE Trans. Magn.

View full text Add to dashboard Cite

A model for estimating the total eddy current losses in ring ferrite cores is proposed, which is based on a microstructure model of the electrical parameters of the material (conductivity and permittivity) and on the solution of the wave equations in the core. The presented model, combined with state of the art estimation of the hysteresis losses gives good agreement with the core loss measurements, over a wide range of frequency (10 kHz to 700 kHz).

show abstract

“…As the critical dimensions of the SiC-based devices continue to decrease [ 16 ], the CVD and PECVD processes became hard to integrate due to the possibility of pinch-off in the HAR structures [ 11 ]. Thus, turning to ALD can be a potential alternative for SiC-based NEMS devices.…”

Section: Introductionmentioning

confidence: 99%

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

View full text Add to dashboard Cite

A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

show abstract

Empowering the Electronics Industry A Power Technology Roadmap

Cited by 6 publications

References 11 publications

An Isolated Power Factor Corrected Power Supply Utilizing the Transformer Leakage Inductance

An Isolated Power Factor Corrected Power Supply Utilizing the Transformer Leakage Inductance

Eddy Current Loss Model for Ferrite Ring Cores Based on a Meta-Material Model of the Core Properties

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Contact Info

Product

Resources

About