Enabling reverse tone imaging for via levels using attenuated phase shift mask and source optimization

Hamieh, Bassem; Choi, Hyun Chol; Erenturk, Burcin; Guo, Wei; Hamouda, Ayman; Liu, Huikan; McIntyre, Gregory; Meiring, Jason; Moreau, David; Thomas, A.; Wei, Alexander

doi:10.1117/12.2011349

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“…(Fig. 2) [3] Fig. 3 is the simulation comparing of DOF, EL and MEEF between att-PSM and OMOG mask of thru-pitch CD, with CD target 45 nm from min.…”

Section: Simulation Resultsmentioning

confidence: 99%

Comparing the Advantage and Disadvantage Between OMOG and PSM Masks for 20nm Node

Yue

Hao

et al. 2014

ECS Trans.

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As 193 nm immersion lithography moves toward sub 20 nm half pitch, a new type of mask known as opaque MoSi on glass (OMOG) has been introduced to overcome the shortcomings of the well-established phase shift mask (PSM). The OMOG gives smaller Mask Enhanced Error Factor (MEEF), better Mask CDU and registration but it also suffers some problems such as poor Line Width Roughness (LWR), lower image contrast. In this paper, we gave a series of experiments to compare the OMOG mask with PSM mask. We checked the thru pitch FEM result for both types of mask. And we have tried some methods to improve contrast and process window. The results showed very promising. The disadvantages for OMOG mask would cause some serious problems. PSM mask can give better LWR and 2D pattern profile but is also suffered higher MEEF and CD control issue.

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“…(Fig. 2) [3] Fig. 3 is the simulation comparing of DOF, EL and MEEF between att-PSM and OMOG mask of thru-pitch CD, with CD target 45 nm from min.…”

Section: Simulation Resultsmentioning

confidence: 99%