Enabling Solutions for 28 nm CMOS Advanced Junction Formation

Li, C. I.; Kuo, Ping‐Huan; Lai, Hien; Ma, Kaisheng; Liu, R.; Wu, Huixian; Chan, Michael; Yang, C. L.; Wu, J. Y.; Guo, B. N.; Colombeau, B.; Thirumal, T.; Arevalo, E.; Toh, T.; Shim, K. H.; Sun, H. L.; Wu, Tony; Lu, Shifeng

doi:10.1063/1.3548450

Cited by 4 publications

(1 citation statement)

References 5 publications

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“…Nowadays cold implants are being incorporated into the fabrication process of electronic devices [1]. Ion implantation at low temperature facilitates the creation of amorphous layers at the Si substrate [2].…”

Section: Introductionmentioning

confidence: 99%

Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study

Santos

Marqués

Pelaz

et al. 2012

AIP Conference Proceedings

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We have studied the temperature effect on the damage generation mechanisms in silicon, suppressing the influence of dynamic annealing. We have done dedicated classical molecular dynamics simulations to determine how the ballistic mechanism and the thermal spikes are affected by temperature. We have quantified the minimum energy required to permanently displace an atom from its lattice position by a ballistic collision. We have found that the displacement energy threshold does not change appreciably with temperature. However, when subthreshold energy is simultaneously deposited in several neighboring particles in a finite volume, i.e. when thermal spikes occur, there is an enhancement of the generation of damage with increasing temperature. In high energy recoils both mechanisms are combined, and it results in an increase of the generated damage with temperature.

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Section: Introductionmentioning

confidence: 99%

Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study

Santos

Marqués

Pelaz

et al. 2012

AIP Conference Proceedings

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Physical understanding of cryogenic implant benefits for electrical junction stability

Khaja

Colombeau

Thanigaivelan

et al. 2012

Applied Physics Letters

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We investigate the effect of cryogenic temperature implants on electrical junction stability for ultra shallow junction applications for sub-32 nm technology nodes and beyond. A comprehensive study was conducted to gain physical understanding of the impact of cryogenic temperature implants on dopant-defect interactions. Carborane (C2B10H12) molecule, a potential alternative to monomer boron was implanted in carbon preamorphized silicon substrates at cryogenic implant temperatures. Results indicate implants at cryogenic temperatures increase dopant activation with reduced diffusion, resulting in lower sheet resistance for a lower junction depth. Further, this study emphasizes the benefits of co-implants performed at cryogenic temperatures as alternative to traditional preamorphizing implants.

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