The transition from a planar to a FinFET device structure has changed device doping requirements. The fin sidewall doping and activation, crystallinity control of the fin, junction profile and leakage control on the fin are new challenges. With continuous scaling of FinFET technology, the narrower fins become more prone to crystallinity damage by ion implant, and lead to increases in junction leakage and fin parasitic resistance. We have introduced hot implant as a superior doping technique to room-temperature implant for arsenic source drain extension (SDE) and halo implants on vertical narrow fins. We have demonstrated for the first time that hot SDE implant on 6nm CD vertical fins produced single crystalline fins and enabled 5x improvement in fin line resistance and more than 10x reduction in junction leakage compared with a room-temperature SDE implant.

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We investigate the tuning of Schottky barrier height (SBH) of nickel silicide formed by pulsed excimer laser anneal of nickel on silicon implanted with aluminum (Al). A wide range of laser fluence was investigated, and it has been found that laser fluence influences the distribution of Al within the silicide and at the silicide/silicon interface. This in turn affects the effective whole SBH (ΦBp) at the silicide/silicon junction. High Al concentration at the silicide/silicon interface and high temperature for nano-second duration to achieve Al activation while keeping the Al concentration within the silicide low is vital for achieving low ΦBp. We demonstrate the achievement of one of the lowest reported ΦBp of ∼0.11 eV. This introduces a new option for forming nickel silicide contacts with reduced contact resistance at low thermal budget for possible adoption in future metal-oxide-semiconductor transistor technologies.

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