Bulk FinFET junction isolation by heavy species and thermal implants

Khaja, Fareen Adeni; Gossmann, Hans‐Joachim L.; Colombeau, B.; Thanigaivelan, Thirumal

doi:10.1109/iit.2014.6939998

Cited by 9 publications

(5 citation statements)

References 11 publications

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“…体区穿通是 FinFET 器件结构上的另一个弱点, 来源于栅电极对 Fin 底部控制力的减弱. 为了抑制体区穿通, 通常采用的办法是进行底部的防穿通注入 [18] , 但是这样引入额外的注入步骤增减了成本, 高注入剂量也可能破坏 Fin 本征沟道的输运优势和抗涨落优势, 并不是一个理想的方案. 针对该问题, 人们提出了 Fin 底部局部隔离的办法 [19,20] , 诸如通过 Fin 底部的贯通氧化的办法形成所谓的 Body-on-insulator FinFET 结构 [19] , 如图 5 所示.…”

Section: Finfet 器件unclassified

Device and integration technologies for VLSI in post-Moore era

Li¹,

Huang²

2018

Sci. Sin.-Inf.

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We herein review the technology transition from the scaling-driven technical roadmap to the powerdriven post-Moore roadmap, focusing on the primary trend in micro/nanoelectronics devices. The novel devices and process integration technologies in post-Moore era, such as the FinFET, gate-all-around transistor, tunneling FET, and the sequential 3D integration process were systematically analyzed to provide new insights into the everlasting evolution of VLSI technology.

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Section: Finfet 器件unclassified

Device and integration technologies for VLSI in post-Moore era

Li¹,

Huang²

2018

Sci. Sin.-Inf.

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“…The main issues with ion implantation are that it introduces crystal damage that cannot be annealed out of these extremely small sub-10 nm devices, and that it is unable to conformally dope three-dimensional nanostructures due to the directionality of the technique. Ion implantation operators have devised several methods to counter these issues such as hot implantations but have shown only moderate success [ 3 – 4 ].…”

Section: Introductionmentioning

confidence: 99%

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

Kennedy¹,

Duffy²,

Eaton³

et al. 2018

Beilstein J. Nanotechnol.

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This paper details the application of phosphorus monolayer doping of silicon on insulator substrates. There have been no previous publications dedicated to the topic of MLD on SOI, which allows for the impact of reduced substrate dimensions to be probed. The doping was done through functionalization of the substrates with chemically bound allyldiphenylphosphine dopant molecules. Following functionalization, the samples were capped and annealed to enable the diffusion of dopant atoms into the substrate and their activation. Electrical and material characterisation was carried out to determine the impact of MLD on surface quality and activation results produced by the process. MLD has proven to be highly applicable to SOI substrates producing doping levels in excess of 1 × 1019 cm−3 with minimal impact on surface quality. Hall effect data proved that reducing SOI dimensions from 66 to 13 nm lead to an increase in carrier concentration values due to the reduced volume available to the dopant for diffusion. Dopant trapping was found at both Si–SiO2 interfaces and will be problematic when attempting to reach doping levels achieved by rival techniques.

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“…7) Carbon is also combined with punch-through stop (PTS) implantation in fin field effect transistors (FinFETs) to prevent boron up-diffusion into the active fin region to reduce the variability in device characteristics due to high channel doping concentration. 8) Precise control of boron activation in FinFETs is necessary. However, previous studies have demonstrated the degradation of boron activation by carbon.…”

Section: Introductionmentioning

confidence: 99%

Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon

Liao¹,

Lin²,

Chang³

2018

Jpn. J. Appl. Phys.

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The influence of carbon on the evolution of boron deactivation was experimentally investigated. The peak profiles of implanted boron overlapped that of carbon in preamorphized silicon. Different annealing conditions were applied to modulate the injection of interstitials from end-of-range (EOR) defects to the recrystallized region. Transient enhanced diffusion was evident during rapid thermal annealing (RTA) at 600 °C while significant boron deactivation caused by carbon coimplantation was observed after solid-phase epitaxial regrowth. The degree of boron deactivation is proportional to the implantation doses of carbon and boron, indicating that the pairing of carbon and boron atoms prevents boron activation. However, carbon prevented further deactivation during additional furnace annealing at 750 °C after RTA because carbon blocked the reaction between boron and excess interstitials that were generated from the EOR defects.

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Bulk FinFET junction isolation by heavy species and thermal implants

Cited by 9 publications

References 11 publications

Device and integration technologies for VLSI in post-Moore era

Device and integration technologies for VLSI in post-Moore era

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon

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