Proceedings of the 21st Annual Symposium on Integrated Circuits and System Design 2008
DOI: 10.1145/1404371.1404407
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Encountering gate oxide breakdown with shadow transistors to increase reliability

Abstract: Device scaling has enabled continuous performance increase of integrated circuits. However, severe reliability and yield concerns are arising against the background of nanotechnology. Traditionally, most causes and countermeasures were solely considered manufacturing issues, but lately, we have seen a shift towards operational reliability issues. Though, besides intense research on soft-errors and system-level approaches very little effort is put into low-level design solutions in order to enhance lifetime rel… Show more

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Cited by 4 publications
(3 citation statements)
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“…Further investigations concentrate on the application of more complex failure models and on algorithms to selectively implement redundancy. Such algorithms promise to adaptively trade area and delay penalties with improvements of the MTTF [20].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Further investigations concentrate on the application of more complex failure models and on algorithms to selectively implement redundancy. Such algorithms promise to adaptively trade area and delay penalties with improvements of the MTTF [20].…”
Section: Resultsmentioning
confidence: 99%
“…Thus, the impact of failure mechanisms (like electromigration, TDDB and NTBI) are also correspondingly smaller. Nevertheless, it is reasonable to apply special design strategies for the multiplexers as well, like transistors with thicker gate oxide [20] and wider wires.…”
Section: Additional Logicmentioning
confidence: 99%
“…Therefore, redundant transistors are inserted randomly into the design to increase yield as regards stuck-open transistors. This idea was extended in [10] where the redundant Shadow Transistors were inserted only at those instances that are most vulnerable to TDDB which increases not just the yield but also lifetime reliability. By inserting transistors with higher gate oxide thickness than the original ones, reliability could be increased even more.…”
Section: Motivationmentioning
confidence: 99%