Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Chen, C. Y.; Goux, L.; Fantini, A.; Clima, Sergiu; Degraeve, R.; Redolfi, A.; Chen, Y. Y.; Groeseneken, G.; Jurczak, M.

doi:10.1063/1.4907573

Cited by 47 publications

(45 citation statements)

References 6 publications

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“…In fact, the negative set that indicates endurance failure is generally due to a breakdown of the bottom electrode interface, resulting in an injection of electrode atoms from the bottom electrode. Therefore, to prevent negative set and improve the cycling endurance in ReRAM technology, it is recommended to adopt inert bottom electrode materials such as carbon, Pt, and Ru …”

Section: Comparison Of Silicon Oxide Rerams To Metal Oxide Rerams (Ementioning

confidence: 99%

Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?

et al. 2018

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Interest in resistance switching is currently growing apace. The promise of novel high-density, low-power, high-speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware acceleration for machine learning and artificial intelligence, and for neuromorphic computing. A very wide range of material systems exhibit resistance switching, a number of which-primarily transition metal oxides-are currently being investigated as complementary metal-oxide-semiconductor (CMOS)-compatible technologies. Here, the case is made for silicon oxide, perhaps the most CMOS-compatible dielectric, yet one that has had comparatively little attention as a resistance-switching material. Herein, a taxonomy of switching mechanisms in silicon oxide is presented, and the current state of the art in modeling, understanding fundamental switching mechanisms, and exciting device applications is summarized. In conclusion, silicon oxide is an excellent choice for resistance-switching technologies, offering a number of compelling advantages over competing material systems.

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Section: Comparison Of Silicon Oxide Rerams To Metal Oxide Rerams (Ementioning

confidence: 99%

Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?

et al. 2018

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“…[8,9] The first RS cells reported date from 1967, [10] and consisted on Au (30 nm), on SiO 2 (300 nm), and on www.advelectronicmat.de Al junctions with a lateral device area of 9 mm 2 . [20] Different material combinations used in MIM cells require different types of electrical stresses in order to show RS, i.e., to induce HRS-to-LRS (set) and LRS-to-HRS (reset) transitions. [7] The most common metals used as electrodes are Pt, Au, Ag, Ti, Ni, and Cu, [1,19] although TaN and TiN are preferred in the industry.…”

mentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

524

434

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Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

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“…This corresponds to a median RW of 10, and a tail-to-tail RW of ∼4. However, for many RSEs reported in [6] and [18]- [20], a larger spread of R HRS is observed. Therefore, in the second scenario, we fix the median R HRS at 1.5 M , while assuming a larger variation, i.e., σ /log 10 (R HRS ) = 0.2.…”

Section: A Variability-affected Device Modelmentioning

confidence: 82%

Cell Variability Impact on the One-Selector One-Resistor Cross-Point Array Performance

Zhang

Cosemans

Wouters

et al. 2015

IEEE Trans. Electron Devices

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This paper investigates the impact of cell variability on the read performance of the one-selector one-resistor (1S1R) cross-point array. A variability-aware array-sizing analysis methodology is introduced, considering three independent variability sources, namely, the data pattern randomness, the selector variability, and the resistive switching element (RSE) variability. By analyzing the impact of each variability factor separately, we show that the data pattern randomness is not an important contributor for the read margin (RM) degradation. While the intrinsic RSE variability reflected in the narrowing of the ON/ OFF RSE window degrades the RM, the selector variability adds to this further, mainly affecting the ON-state readout current, and causing extra RM degradation. To accommodate cell variability and guarantee acceptable read performance, additional cell performance margin is required. The 1S1R requirements are extrapolated for 1-Mb array, assuming variability-affected cells. It is found that, with a typical selector variability, a minimal RSE window of 5 and a selector half-bias nonlinearity of ∼8000 are required to achieve at least 10% RM.Index Terms-Cross-point array, Monte Carlo, one-selector one-resistor (1S1R), read margin (RM), resistive random access memory, selector, SPICE simulation, variability.

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Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Cited by 47 publications

References 6 publications

Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?

Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?

Recommended Methods to Study Resistive Switching Devices

Cell Variability Impact on the One-Selector One-Resistor Cross-Point Array Performance

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Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Cited by 47 publications

References 6 publications

Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

Recommended Methods to Study Resistive Switching Devices

Cell Variability Impact on the One-Selector One-Resistor Cross-Point Array Performance

Contact Info

Product

Resources

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Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?

Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?