Energie seuil de deplacement dans le bismuth

Quelard, G.; Dural, J.; Ardonceau, J.; Lesueur, D.

doi:10.1080/00337577808233245

Cited by 15 publications

(2 citation statements)

References 6 publications

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“…K −1 close to those previously used (λ ≈ 26 nm and ℊ ≈ 2 × 10 11 W.cm −3 .K −1 ) to describe the track size in case of bulk Bi target. The Bi target electronic stopping power values for 63 Cu q ions at different charge states were obtained using the CasP code (version 5.2), while the nuclear stopping power was evaluated by the SRIM code . Then, knowing the evolution of the T a ( r , t ) function, the total sputtering yield (ie, total number of evaporated particles from the target surface by incident ion) is determined using the following relation:

Y ((), italicat . / italicion) = \int_{0}^{\infty} italicdt \int_{0}^{\infty} Φ ((), T_{a} ((),, r, t)) 2 italicπrdr,

by integrating over radial space and time of the evaporation rate given as:

normalΦ ((), T_{a} ((),, r, t)) = n_{a} \sqrt{\frac{k_{B} T_{a} (r, t)}{2 π M_{a}}} italicexp ((), \frac{- U_{s}}{k_{B} T_{a} (r, t)}),

similar to the Sigmund‐Claussen approach for sputtering by elastic‐collision spikes and the Johnson‐Evatt thermal spike model .…”

Section: Analysis Of Results Comparison With Theory and Discussionmentioning

confidence: 99%

Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.

Mammeri

Msimanga

Dib

et al. 2017

Surface & Interface Analysis

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The sputtering of bismuth (Bi/Si) thin films deposited onto silicon substrates and irradiated by swift Cu q+ heavy ions (q = +4 to +7) was investigated by varying both the ion energy over the 10 to 26-MeV range and the ion fluence ϕ from 5.1 × 10 13 cm −2 to 3.4 × 10 15 cm −2 . The sputtering yields were determined experimentally via the Rutherford backscattering spectrometry technique using a 2-MeV He + ion beam. The measured sputtering yields versus Cu 7+ ion fluence for a fixed incident energy of 26 MeV exhibit a significant depression at very low ϕ-values flowed by a steady-state regime above~1.6 × 10 14 cm −2 , similarly to those previously pointed out for Bi thin films irradiated by MeV heavy ions. By fixing the incident ion fluence to a mean value of~2.6 × 10 15 cm −2 in the upper part of the yield saturation regime, the measured sputtering yield data versus ion energy were found to increase with increasing the electronic stopping power in the Bi target material. Their comparison to theoretical predicted models is discussed. A good agreement is observed between the measured sputtering yields and the predicted ones when considering the contribution of 2 competitive processes of nuclear and electronic energy losses via, respectively, the SRIM simulation code and the inelastic thermal spike model using refined parameters of the ion slowing down with reduced thermophysical proprieties of the Bi thin films. KEYWORDS electronic sputtering yield, nuclear and electronic stopping power, Rutherford backscattering spectrometry (RBS), inelastic thermal spike model, sss

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Y ((), italicat . / italicion) = \int_{0}^{\infty} italicdt \int_{0}^{\infty} Φ ((), T_{a} ((),, r, t)) 2 italicπrdr,