For the first time, irradiation defects in bismuth and tellurium‐doped bismuth have been studied. Preliminary results of neutron irradiation are presented. To explain the observed results a simple model is proposed which takes into account the decrease of carrier mobilities due to crystalline defects and the donor, acceptor, or even neutral character of these defects.

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2014 Nous avons irradié du bismuth, à 20 K, aux neutrons rapides. Les variations de résistivité électrique, au cours de l'endommagement et du recuit, sont indépendantes de l'orientation cristallographique et indiquent une création de porteurs au cours de l'irradiation. Abstract. 2014 The production and recovery of fast neutron radiation damage in bismuth, at 20 K has been studied by means of electrical resistivity. Results are independent of crystallographic orientation and indicate a creation of carriers during irradiation.

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