Résistivité électrique du bismuth irradié aux neutrons rapides

Abstract

2014 Nous avons irradié du bismuth, à 20 K, aux neutrons rapides. Les variations de résistivité électrique, au cours de l'endommagement et du recuit, sont indépendantes de l'orientation cristallographique et indiquent une création de porteurs au cours de l'irradiation. Abstract. 2014 The production and recovery of fast neutron radiation damage in bismuth, at 20 K has been studied by means of electrical resistivity. Results are independent of crystallographic orientation and indicate a creation of carriers during irradiation.

On the Discrepancies in Defect Studies in Bi

“…In their papers the authors do not comment on the location and the nature of the different recovery stages. However, from the figures of the isochronal annealing curve of the electrical resistivity [8] and of the isochronal annealing curve of the electrical resistivity [8] and of the differential isochronal annealing curve [lo] we derive that, apart from the recovery stages below 80 K, a recovery stage can be observed, situated from 100 to 140 K.…”