Neutron radiation defects in bismuth and tellurium-doped bismuth

Quelard, G.; Lesueur, D.

doi:10.1002/pssa.2210360234

Cited by 23 publications

(2 citation statements)

References 5 publications

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“…While the percolation model assumes a non-uniform irradiated material, consisting of conducting and insulating regions, we can also consider a uniform irradiated material. Such a model, consistent with the low-temperature behaviour of HMTSF-TCNQ has been proposed for bismuth [11].…”

Section: Fig 1 -Dose Curves Of Two Hmtsf-tcnq Samples Irradiatedsupporting

confidence: 70%

The effects of irradiation of HMTSF-TCNQ at 21 K

et al. 1978

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2014 Nous avons irradié le conducteur organique HMTSF-TCNQ à basse température, avec des neutrons rapides (~ 1 MeV) et des ions lourds (~ 100 MeV). Nous avons mesuré la résistivité de plusieurs échantillons, en continu et in situ pendant l'irradiation. Lorsqu'on atteint une fraction molaire de défauts de l'ordre de 10-3, la résistivité, mesurée à la température d'irradiation, a augmenté d'un facteur 4. Ces résultats préliminaires sont l'occasion de présenter deux modèles simples : i) percolation du gaz d'électrons à travers un composite formé de volumes conducteurs et de volumes rendus isolants par l'irradiation; ii) irradiation d'un semi-métal anisotrope mais homogène. Abstract. 2014 We present measurements of HMTSF-TCNQ (hexamethylenetetraselenaful-valenium-tetracyanoquinodimethanide) resistivity along the chain axis, during irradiation at 21 K with fast neutrons (~ 1 MeV) and heavy ions (~ 100 MeV). A defect concentration estimated to be 10-3 mole fraction, increases the resistivity at 21 K by a

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Section: Fig 1 -Dose Curves Of Two Hmtsf-tcnq Samples Irradiatedsupporting

confidence: 70%

The effects of irradiation of HMTSF-TCNQ at 21 K

et al. 1978

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“…The number of displacements per atom is c = σ d φ where σ d is the cross-section for displacement and φ the dose. Models have been developed for calculating the displacement cross-section in a polycrystal with different types of atoms [400].…”

Section: 31b Impurity Pinningmentioning

confidence: 99%

Electronic crystals: an experimental overview

Monceau

2013

Preprint

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This article reviews the static and dynamic properties of spontaneous superstructures formed by electrons. Representations of such electronic crystals are charge density waves and spin density waves in inorganic as well as organic low dimensional materials. A special attention is paid to the collective effects in pinning and sliding of these superstructures, and the glassy properties at low temperature. Charge order and charge disproportionation which occur in organic materials resulting from correlation effects are analysed. Experiments under magnetic field, and more specifically field-induced charge density waves are discussed. Properties of meso-and nanostructures of charge density waves are also reviewed.

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Defect recovery after 77 K plastic deformation in bismuth

Lemahieu¹,

Dorikens‐Vanpraet²,

Dorikens³

et al. 1987

Cryst. Res. Technol.

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Uopi~lerbroac~ening measurements were performed in 77 K deforinetl bismutli in tlie ten1-perature range between 80 K and 410 K. An important trapping effect was obser\.ed. Two recovery stages were found, one a t 230 K and the other at 380 K. The measurements were compared with tlie results obtained from positron annihilation lineshape measureIiients in as-received polycrystalline bismuth samples of different purities, and in room temperature deformed bismuth samples. In all samples a recovery stage a t 380 K was found, which is ascribed to the annealing of dislocations. Lifetime measurements were performed in the as-received bismuth samples. For dislocations a lifetime of 289 ps was found.

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Neutron radiation defects in bismuth and tellurium-doped bismuth

Cited by 23 publications

References 5 publications

The effects of irradiation of HMTSF-TCNQ at 21 K

The effects of irradiation of HMTSF-TCNQ at 21 K

Electronic crystals: an experimental overview

Defect recovery after 77 K plastic deformation in bismuth

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