Energy band-gap dependence of two-photon absorption

Stryland, Eric W. Van; Woodall, Milton; Vanherzeele, Herman; Soileau, M. J.

doi:10.1364/ol.10.000490

Cited by 319 publications

(192 citation statements)

References 10 publications

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“…2(b)), which corresponds to Imχ (3) ∼ 10 −9 esu. This value is larger than that predicted from the gap-dependent scaling law derived for conventional semiconductors [12] by one order of magnitude, and is comparable to that of conventional 1D-structured materials. The scaling law [12] is inapplicable to Mott-insulators, in which the origin of the optical nonlinearity is the very large dipole coupling between nearly degenerate excited states of opposite parities.…”

mentioning

confidence: 48%

“…This value is larger than that predicted from the gap-dependent scaling law derived for conventional semiconductors [12] by one order of magnitude, and is comparable to that of conventional 1D-structured materials. The scaling law [12] is inapplicable to Mott-insulators, in which the origin of the optical nonlinearity is the very large dipole coupling between nearly degenerate excited states of opposite parities. The mechanism of optical nonlinearity here is related to that in the π-conjugated polymers, which are described within the one-band extended Hubbard model and in which also there occurs very large dipole coupling between the optical state and a two-photon state slightly higher in energy [13].…”

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confidence: 48%

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Ultrafast Optical Nonlinearity in the Quasi-One-Dimensional Mott InsulatorSr2CuO3

et al. 2000

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We report strong instantaneous photoinduced absorption in the quasi-onedimensional Mott insulator Sr 2 CuO 3 in the IR spectral region. The observed photoinduced absorption is to an even-parity two-photon state that occurs immediately above the absorption edge. Theoretical calculation based on a two-band extended Hubbard model explains the experimental features and indicates that the strong two-photon absorption is due to a very large dipolecoupling between nearly degenerate one-and two-photon states. Room temperature picosecond recovery of the optical transparency suggests the strong potential of Sr 2 CuO 3 for all-optical switching.Typeset using REVT E X 1

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Ultrafast Optical Nonlinearity in the Quasi-One-Dimensional Mott InsulatorSr2CuO3

et al. 2000

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“…The dielectric topcoating can be applied after MBE growth, which allows for additional flexibility in terms of finesse change of the structure. From a material point of view, SiO 2 and Si 3 N 4 are dielectric materials, and therefore exhibit negligible TPA compared to GaAs [50], which results in reduced IA. The nonlinear reflectivity measurements and corresponding extracted parameters are presented together with the measured damage thresholds in Figure 8a, and Table 3.…”

Section: Studied Structures and Obtained Resultsmentioning

confidence: 99%

Cutting-Edge High-Power Ultrafast Thin Disk Oscillators

et al. 2013

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A growing number of applications in science and industry are currently pushing the development of ultrafast laser technologies that enable high average powers. SESAM modelocked thin disk lasers (TDLs) currently achieve higher pulse energies and average powers than any other ultrafast oscillator technology, making them excellent candidates in this goal. Recently, 275 W of average power with a pulse duration of 583 fs were demonstrated, which represents the highest average power so far demonstrated from an ultrafast oscillator. In terms of pulse energy, TDLs reach more than 40 μJ pulses directly from the oscillator. In addition, another major milestone was recently achieved, with the demonstration of a TDL with nearly bandwidth-limited 96-fs long pulses. The progress achieved in terms of pulse duration of such sources enabled the first measurement of the carrier-envelope offset frequency of a modelocked TDL, which is the first key step towards full stabilization of such a source. We will present the key elements that enabled these latest results, as well as an outlook towards the next scaling steps in average power, pulse OPEN ACCESSAppl. Sci. 2013, 3 356 energy and pulse duration of such sources. These cutting-edge sources will enable exciting new applications, and open the door to further extending the current performance milestones.

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“…35 The electron and hole wave functions ͓ e ͑r͒ and h ͑r͔͒ are determined by the multiplication of the radial wave function determined by Eqs. ͑2͒ and ͑3͒ with the spherical harmonics ͓i.e., R n,ᐉ ͑r͒Y ᐉ,m ͑ , ͔͒.…”

Section: Resultsmentioning

confidence: 99%

Self-consistent computation of electronic and optical properties of a single exciton in a spherical quantum dot via matrix diagonalization method

Şahin

Nizamoğlu

Kavruk

et al. 2009

Journal of Applied Physics

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Cataloged from PDF version of article.In this study, we develop and demonstrate an efficient self-consistent calculation schema that computes the electronic structure and optical properties of a single exciton in a spherical quantum dot (QD) with an interacting pair of electron and hole wave functions. To observe modifications on bands, wave functions, and energies due to the attractive Coulomb potential, the full numeric matrix diagonalization technique is employed to determine sublevel energy eigenvalues and their wave functions in effective mass approximation. This treatment allows to observe that the conduction and valance band edges bend, that the electron and hole wave functions strongly localize in the QD, and that the excitonic energy level exhibits redshift. In our approach for the Coulomb term between electron and hole, the Poisson-Schrodinger equations are solved self-consistently in the Hartree approximation. Subsequently, exciton binding energies and associated optical properties are computed. The results are presented as a function of QD radii and photon energies. We conclude that all of these numerical results are in agreement with the experimental studies. (C) 2009 American Institute of Physics

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Energy band-gap dependence of two-photon absorption

Cited by 319 publications

References 10 publications

Ultrafast Optical Nonlinearity in the Quasi-One-Dimensional Mott InsulatorSr2CuO3

Ultrafast Optical Nonlinearity in the Quasi-One-Dimensional Mott InsulatorSr2CuO3

Cutting-Edge High-Power Ultrafast Thin Disk Oscillators

Self-consistent computation of electronic and optical properties of a single exciton in a spherical quantum dot via matrix diagonalization method

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