Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

Aldegunde, Manuel; Kálna, K.

doi:10.1016/j.cpc.2014.11.020

Cited by 4 publications

(1 citation statement)

References 18 publications

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“…In this work, we have employed an in-house bulk ensemble Monte Carlo (MC) simulation code , to determine the electron transport properties of Al 4 SiC 4 . The MC simulations use a combination of known material properties from reported experimental data and theoretical calculations using DFT.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al₄SiC₄

Forster

Chaussende

Kálna

2018

ACS Appl. Energy Mater.

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Electron transport characteristics of a novel wide band gap ternary carbide, Al4SiC4, to be used for efficient power and optoelectronic applications, are predicted using ensemble Monte Carlo (MC) simulations. The MC simulations use a mixture of material parameters obtained from density functional theory (DFT) calculations and experiment, with a preference for the experimental data if they are known. The DFT calculations predict a band gap of 2.48 eV, while the experimental measurements give a band gap between 2.78 and 2.8 eV. We have found that the electron effective mass in the two lowest valleys (M and K) is highly anisotropic; in the K valley, m t * = 0.5678 m e and m l * = 0.6952 m e, and for the M valley, m t * = 0.9360 m e and m l * = 1.0569 m e. We simulate electron drift velocity and electron mobility as a function of applied electric field as well as electron mobility as a function of doping concentration in Al4SiC4. We predict a peak electron drift velocity of 1.35 × 107 cm s–1 at an electric field of 1400 kV cm–1 and a maximum electron mobility of 82.9 cm2 V–1 s–1. We have seen diffusion constants of 2.14 cm2 s–1 at a low electric field and 0.25 cm2 s–1 at a high electric field. Finally, we show that Al4SiC4 has a critical field of 1831 kV cm–1.

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Section: Introductionmentioning

confidence: 99%

Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al₄SiC₄

Forster

Chaussende

Kálna

2018

ACS Appl. Energy Mater.

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Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes

Alabdullah,

Elmessary,

Nagy

et al. 2024

IEEE J. Electron Devices Soc.

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Exact Correction of the Self-Force Problem in Monte Carlo Device Simulation

Ghetti

2019

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

Cited by 4 publications

References 18 publications

Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al₄SiC₄

Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al₄SiC₄

Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes

Exact Correction of the Self-Force Problem in Monte Carlo Device Simulation

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Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

Cited by 4 publications

References 18 publications

Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4

Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4

Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes

Exact Correction of the Self-Force Problem in Monte Carlo Device Simulation

Contact Info

Product

Resources

About

Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al₄SiC₄

Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al₄SiC₄