Energy dependence of neutron damage in silicon bipolar transistors

Sparks, M. H.; Flanders, T. M.; Williams, J. G.; Kelly, John G.; Sallee, W.W.; Roknizadeh, Mansour; Meason, J.L.

doi:10.1109/23.45385

Cited by 21 publications

(4 citation statements)

References 9 publications

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“…For tests involving the effects of neutron radiation on silicon devices, a more convenient set of comparison metrics have evolved through the years [3,11,12].…”

Section: Shape Index and Hardness Parametermentioning

confidence: 99%

“…Efforts to understand the role of dosimetry included simultaneous neutron spectrum and transistor damage measurement in a variety of test environments [2]. In the mid-1980s a renewed effort to improve the radiation environment characterization and standardization of test methods between the three US test reactor dosimetry laboratories [3] was begun.…”

Section: Introductionmentioning

confidence: 99%

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A Re-Evaluation of the Reference Environment at the WSMR Fast Burst Reactor

Sparks¹,

Flanders²

2016

EPJ Web of Conferences

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Abstract. This paper reviews the primary reference field at 60.96 cm from core centreline and re-examines the reference environment with improved characterizations of the reactor structure, test fixtures and also addresses some smaller issues of non-tracking calculations by monte carlo methods with various cross section set generations. We are also addressing long standing issues of absolute normalization of integral fluence based on the original characterizations of the facility diagnostic instrumentation.

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“…For tests involving the effects of neutron radiation on silicon devices, a more convenient set of comparison metrics have evolved through the years [3,11,12].…”

Section: Shape Index and Hardness Parametermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Re-Evaluation of the Reference Environment at the WSMR Fast Burst Reactor

Sparks¹,

Flanders²

2016

EPJ Web of Conferences

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“…The ASTM E-722 Standard [1,2] for reporting equivalent monoenergetic neutron fluences for radiation-hardness testing of electronics has changed significantly. A new 1-MeV(Si) displacement damage function, based on a recent Oak Ridge National Laboratory (ORNL) 28Si cross section evaluation [3] and experimentally validated for a wide range of fission spectra [4,5], has been adopted in the standard. The new standard also defined a 1-MeV(GaAs) equivalent fluence.…”

Section: Why the Change?mentioning

confidence: 99%

Updated neutron spectrum characterization of SNL baseline reactor environments. Volume 1, Characterization

Griffin¹,

Kelly²,

Vehar³

1994

Self Cite

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The neutron spectrum characteristics of the primary reactor environments are defined for use by facility customers and to provide an audit trail in support of current quality assurance initiatives. The neutron and gamma environments in the four primary customer environments at SPR-III and ACRR facilities are characterized in detail. Enough detail is provided on other frequently-used environments to support the definition of the 3-MeV and 1-MeV(Si) fluence provided on the Radiation Metrology Laboratory dosimetry reports. Details are provided to enable customers to compare new dosimetry results in the four primary environments with dosimetry reports from previous irradiations. SAND-II and MANIPULATE output listings used to derive the new spectrum-averaged integral parameters are provided in appendices that appear in volume 2 of this document. Intentionally Left Blank _ NATIONAL IJLBOR_TORIES Radiation _trology Laboratory Nuclear Facilitie| and Diagnostic| Department Albuquerque, NN 87185-1142 (505) 845-3250 Sulfur Dosimetry I-JAN-94 llslTt25 Ex_orlmonters J. Doe Organizationz AAA FacilitFt Uncharecterlzed Shot Number: 9181 8hot Datez 01-JAN-1994 16s00 File s UD: [TEST. DATA] SOL_datb_03622. dat LaSt odltod: I6-FEB-94 12s56s25 Counter 1 Background 1.50 +/-0.22 cpm >3 Mov/fac_tots 0.0000 +/-0.00% l-MeV(Sl)/f&c_totz 0.0000 +/-0.00% C£-252/fac_tots 1.0000 +/-0.00%

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“…[2] Displacement damage is one of the important factors leading to the degradation of bipolar transistor performance. Many investigations have been carried out on the displacement damage effect of bipolar transistors, [3,4] and some people have even used the gain degradation models to measure the particle fluence. [5] Neutrons, protons, and electrons can cause displacement damage in semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

Liu

Chen

et al. 2019

Chinese Phys. B

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Displacement damage induced by neutron irradiation in China Spallation Neutron Source (CSNS) is studied on bipolar transistors with lateral PNP, substrate PNP, and vertical NPN configurations, respectively. Comparison of the effects on different type transistors is conducted based on displacement damage factor, and the differences are analyzed through minority carrier lifetime calculation and structure analysis. The influence of CSNS neutrons irradiation on the lateral PNP transistors is analyzed by the gate-controlled method, including the oxide charge accumulation, surface recombine velocity, and minority carrier lifetime. The results indicate that the total ionizing dose in CSNS neutron radiation environment is negligible in this study. The displacement damage factors based on 1-MeV equivalent neutron flux of different transistors are consistent between Xi’an pulse reactor (XAPR) and CSNS.

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Energy dependence of neutron damage in silicon bipolar transistors

Cited by 21 publications

References 9 publications

A Re-Evaluation of the Reference Environment at the WSMR Fast Burst Reactor

A Re-Evaluation of the Reference Environment at the WSMR Fast Burst Reactor

Updated neutron spectrum characterization of SNL baseline reactor environments. Volume 1, Characterization

Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

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