One of the problems which are met in conventional transmission electron microscopy (CTEM) at high voltages is the reduction of the sensitivity of photographic films for high energy electron beams, resulting in the necessity of using high beam current. This cancels out an advantage of high voltage electron microscopy which is otherwise expected from the reduction of the inelastic scattering in the specimen, that is the reduced radiation damage of the specimen during observations. However, it is expected that the efficiency of the detector of scanning transmission electron microscopy (STEM) can be superior to that of CTEM, since the divergence of the electron beam in the detecting material does not affect the quality of the image. In addition to observation with less radiation damage, high voltage STEM with high detection efficiency is very attractive for observations of weak contrast objects since the enhancement of the contrast (which is an important advantage of STEM) is easily realized electrically.