2021
DOI: 10.1109/ted.2020.3038140
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Energy-Efficient All-Spin BNN Using Voltage-Controlled Spin-Orbit Torque Device for Digit Recognition

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Cited by 26 publications
(5 citation statements)
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“…In conclusion, using MTJs as neurons and synapses in BNN is feasible. Shreya et al implemented an all-spin BNN, reducing power consumption by 82% compared to a SRAM-based BNN [118].…”
Section: Mtjs For Bnnsmentioning
confidence: 99%
“…In conclusion, using MTJs as neurons and synapses in BNN is feasible. Shreya et al implemented an all-spin BNN, reducing power consumption by 82% compared to a SRAM-based BNN [118].…”
Section: Mtjs For Bnnsmentioning
confidence: 99%
“…These non-volatile and energy-efficient devices have the potential for unsupervised learning through dynamic conductance adjustments, guided by an innovative learning rule. Although there are a few works that proposed the use of MTJs for plasticity dynamics in SNN (Shreya et al, 2020 ; Jang et al, 2021 ; Leonard et al, 2022 ), there is a need to demonstrate this in a full network trained with a device-specific learning rule. The key contribution of this paper focuses on the synaptic design and a compatible learning rule .…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, it is expected to solve reliability, area cost and energy efficacy bottlenecks and provide more possibilities for learning and computing processes of large-scale NC. Typically, the magnetoresistive random-access memory (MRAM) bears competitive advantages of high read and write speed, high reliability, ultra-low power consumption, and nearly infinite endurace 25 , 26 . Therefore, developing neuromorphic hardware based on the advanced MRAM components is paramount important from the practical application perspectives, in which the synthetic antiferromagnet (SAF) 27 29 poises as the kernel of the commercialized MRAM cell, i.e., magnetic tunnel junction (MTJ) as described in early reports and our previous works 3 , 30 38 .…”
Section: Introductionmentioning
confidence: 99%