Driven by the development
of internet technology, higher requirements
on information materials and data storage devices were demanded. To
improve the work efficiency and performance of the new generation
of information materials and data storage devices, the magnetoelectric
(ME) coupling and storage mechanism of magnetoelectric composites
deserve more attention. Here, we explored the influence of applied
magnetic fields on the output voltage on a metal–insulation–metal
(MIM) sandwich composite for realizing the magnetoelectric memory
by experiments and modeling. It is found that the DC magnetic field
(
H
dc
) and the output voltage of the polyvinylidene
fluoride film are linearly correlated. At a frequency of 1 kHz, the
magnetoelectric voltage coefficient is 60.71 mV cm
–1
Oe
–1
, which is evidently larger than that of other
film materials. From this work, we can conclude that the MIM sandwich
composite could generate higher magnetoelectric voltage under the
AC magnetic field (
H
ac
) with higher frequency,
which could be used as the magnetoelectric memory device, and provides
significant support for improving the performance of magnetoelectric
memory devices and the whole internet system.