Energy Efficient Sensors Based on Carbon-Modified Silica Films

Sakharov, Yu. V.; Troyan, P. E.; Zhidik, Yurii

doi:10.1109/sibcon.2019.8729582

Cited by 1 publication

(2 citation statements)

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“…The influence of the upper electrode material on switching properties of memristors was analyzed on the basis of Mo-TiO 2 /TiO x -Ni, Mo-TiO 2 /TiO x -Сu, and Mo-TiO 2 /TiO x -Ni/Cu structures. Core-type structures were used as a substrate [9] (Fig. 1).…”

Section: Methodsmentioning

confidence: 99%

“…In order to produce the test memristor elements, 50-nm TiO 2 films were deposited by magnetron sputtering of a titanium target in Ar with 35% O 2 and at a gas mixture pressure of 7•10 -2 mm Hg. The discharge current was 300 mA, which corresponded to a film deposition rate of 16 nm/min [9]. TiO x films were deposited by magnetron sputtering of the Ti target in Ar with 10% O 2 under equal identical conditions.…”

Section: Methodsmentioning

confidence: 99%

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Obtaining memristor elements based on non-noble materials

2018

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This study is aimed at creating memristor elements based on TiO2/TiOx layers with electrodes that do not contain noble and rare-earth metals, by vacuum deposition method. The characteristics of these elements analyzed by voltammetric methods show that the appearance of an N-type region of negative differential resistance on the current–voltage curve can be caused only by metal electrodes whose vacuum work function exceeds that of TiO2. The appearance of the N-type region on the current–voltage curve of a memristor element is possible only after electrically assisted vacuum forming. Mo–TiO2/TiOx–Ni/Cu structures, for which the ILR/IHR ratio reaches two orders of magnitude at a voltage of less than 4 V, have the most stable parameters.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%