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The paper represents research of thermal stability of optical and electro-physical parameters of ITO films deposited using various techniques. Variation of optical and electro-physical parameters was recorded using spectroscopy, and Hall’s and four-probe measurements. The best thermal stability was demonstrated by ITO films deposited by metal target sputtering In(90%)/Sn(10%) in mixture of gases O2 (25%) + Ar (75%) with further annealing in air atmosphere. This enables to apply this technique for production of thin film transparent resistive elements capable to heat the translucent structures up to 100°C without deterioration of their parameters.

In this paper, we present the research results on the formation mechanism of stoichiometric compounds of complex thin films formed by ion-plasma sputtering in reactive gases environment. The kinetics of complex films’ formation and growth is studied as well as the change in characteristics of microelectronics elements formed on the basis of thin films during their electron-ion bombardment.