Study and production of thin-film memristors based on TiO₂ – TiO_x layers

A Review of Phase-Change Materials and Their Potential for Reconfigurable Intelligent Surfaces

“…They presented absorption bandwidths of 7.9 and 7.4 GHz for λ-Ti 3 O 5 and Li/λ-Ti 3 O 5 , respectively. Zhidik et al developed a memristor using stoichiometric TiO 2 and nonstoichiometric TiOx [ 13 ]. A structure of Mo-TiO x -TiO 2 -Cu was developed on a coaxial glass-metal kern.…”

“…( a ) Schematics of a metasurface based on Ti 2 O 3 being tuned under sunlight illumination to modulate THz waves [ 11 ]. ( b ) Schematic of memristor structures on kern-type substrate using a multilayer TiO 2 and TiO x metafilm [ 13 ].…”

“…This variability in volatility is an important consideration when working with PCMs, and researchers are exploring new ways to leverage this unique property to create more dynamic and tunable materials. Examples of volatile PCMs that have been highly studied at the time of this review are vanadium oxides [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 ], titanium oxides [ 10 , 11 , 12 , 13 ], iron oxide (Fe 3 O 4 ) [ 14 , 15 , 16 ], lanthanum cobaltite (LaCoO 3 ) [ 17 , 18 ], niobium dioxide (NbO 2 ) [ 19 , 20 ], and rare-earth nickelates ( R NiO 3 ) [ 21 , 22 , 23 , 24 , 25 , 26 , 27 ]. Chalcogenides (Ge 2 Sb 2 Te 5 /Ge 2 Sb 2 Se 4 Te, Sb 2 Se 3 , Sb 2 S 3 ) [ 28 , 29 , 30 , 31 , 32 , 33 ] are among the most studied non-volatile PCMs in the recent literature.…”