Investigation of temperature stability of ITO films characteristics

Abstract

The paper represents research of thermal stability of optical and electro-physical parameters of ITO films deposited using various techniques. Variation of optical and electro-physical parameters was recorded using spectroscopy, and Hall’s and four-probe measurements. The best thermal stability was demonstrated by ITO films deposited by metal target sputtering In(90%)/Sn(10%) in mixture of gases O2 (25%) + Ar (75%) with further annealing in air atmosphere. This enables to apply this technique for production of thin film transparent resistive elements capable to heat the translucent structures up to 100°C without deterioration of their parameters.

Investigation of degradation mechanisms in small scaled amorphous-indium-gallium-zinc-oxide thin-film-transistors

“…In this work, the a-IGZO TFT array has been fabricated on a glass substrate in a well-controlled production line, the detailed process described in Song, et al 27 The TFT has a back channel etch (BCE) inverted staggered bottom gate structure. Cu/Ti metal forms TFT source/drain of different sizes.…”

“…[24][25][26] Another study shows the degradation by the parasitic resistance generation phenomenon as discussed by J. Song and Huang et al 27,28 The present study aimed to investigate the negative shift of the threshold voltage dependent of the channel length and width of a-IGZO TFT devices under negative-bias stress, as well as their degradation mechanism. We selected TFT devices having different channel sizes (width × length) for comparison and analysis.…”

Capacitive transducers based ITO/polyimide/Al2O3 thin film structure

“…To control the surface electrical resistance of the ITO layer, the four-probe method was used [11], and the surface electrical resistance (R ) of the ITO layers determined by this method is equal to 8-15 Ω/m. E.m.f.…”