Energy harvesting based on piezoelectric AlN and AlScN thin films deposited by high rate sputtering

Frach, Peter; Barth, S.; Bartzsch, Hagen; Gloess, Daniel

doi:10.1117/12.2262460

Cited by 6 publications

(2 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One technique for developing AlN films is sputtering [100], [101]. This technique is a promising approach for developing energy harvesting applications because AlN is a low-temperature preparation material with unique physical properties and is a highly thermally stable material with a melting point of approximately 2100 • C, with a piezoelectric effect study up to temperatures of approximately 1150 • C [101].…”

Section: ) Aln-based Energy Harvestersmentioning

confidence: 99%

“…Frach et al [100] used reactive-pulsed magnetron sputtering with a double-ring magnetron DRM 400 to develop AlScN films. Pure Al and Sc-targets were used to deposit AlN or Al x Sc 1−X N, respectively, with Sc concentrations up to 55%; based on the designs, an RMS power of 70 µW for AlN and 350 µW for AlSc(0.4)N were obtained and as the thickness was increased from 10 um to 50 µm the output power saw an increase to 140 uW.…”

Section: ) Aln-based Energy Harvestersmentioning

confidence: 99%

See 1 more Smart Citation

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

et al. 2023

View full text Add to dashboard Cite

Piezoelectric materials have attracted considerable attention over the last two decades because many technologies utilize their core properties of piezoelectric materials. Previous applications consisted of bulk structures; however, a shift towards better performance and a more simplified and compatible fabrication method are required. Aluminum nitride (AlN) is a material that fits these criteria; it has a non-centrosymmetric crystal structure with a polarized c-axis and exhibits piezoelectric properties. Furthermore, it has an added benefit as the fabrication process of AIN is compatible with complementary metal-oxide semiconductor technology. This has led to a rapid increase in the adoption and interest in AlNbased devices. In this review, the crystal structure of AlN and its piezoelectric properties are compared with those of aluminum scandium nitride. Subsequently, functional devices such as consumer-based devices, telecommunication-based devices, industrial-related applications, and medical applications are presented. Finally, a summary and discussion of the future AlN research are presented.

show abstract

Section: ) Aln-based Energy Harvestersmentioning

confidence: 99%

Section: ) Aln-based Energy Harvestersmentioning

confidence: 99%

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

et al. 2023

View full text Add to dashboard Cite

show abstract

A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition

et al. 2020

View full text Add to dashboard Cite

Simultaneously inducing preferred crystalline orientation with a strong piezoelectric response in polycrystalline aluminum nitride (AlN) thin films by atomic layer deposition is a technical challenge due to the upscaling of the integration of piezoelectric functionalities, such as sensing and actuation, in micro-devices without any poling process. Utilizing low-temperature plasma-enhanced atomic layer deposition (PE-ALD), highly c-axis-oriented AlN films have been prepared with precise control over the relative composition, purity levels, and chemical states of constituent elements. Tailoring thermodynamic parameters, such as the growth temperature and purging time after the trimethylaluminum precursor pulsing before the N2:H2:Ar plasma reaction, provide the possibility of modulating the texture coefficient and the relative piezoelectric response. The effective transverse piezoelectric e31,f coefficient of 0.37 C/m2 was achieved on the AlN film grown at 250 °C and 30 s with the highest texture coefficient TC(002) of 2.75 along the c-axis orientation. The process proposed, at a low temperature with the highly conformal growth of aluminum nitride thin films by PE-ALD, opens up pathways to design novel piezoelectric functional materials for micro-electro-mechanic system devices with complementary metal oxide semiconductor process temperature compatibility.

show abstract

Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties

Ambacher

Christian

Feil

et al. 2021

Journal of Applied Physics

View full text Add to dashboard Cite

We present detailed investigations of the structural, elastic, dielectric, and piezoelectric properties of scandium aluminum nitride (ScxAl1−xN) with the wurtzite crystal structure by means of first-principles calculations based on density functional theory in order to enable a detailed comparison to the corresponding physical properties of GaAlN and InAlN. The goal of our approach is to use atomistic simulations to extract the novel solid state characteristics of ScxAl1−xN crystals by the determination of complete sets of coefficients for the elastic, compliance, and piezoelectric tensor and to confirm the theoretical predictions by experimental measurements of selected tensor coefficients. The calculation of the tensor components is accompanied by a detailed analysis of the crystal structures, e.g., average bond length, bond angles, lattice parameters, and mass density in dependence on alloy composition of ScxAl1−xN. If an increasing number of Al atoms of up to x = 0.5 are replaced by Sc atoms, we observe a nonlinear change of the ratio of lattice parameter c(x)a(x) and average bond angles of about 10% and 5%, respectively, which give an indication of an increasing deviation of the crystal structure of ScxAl1−xN from an ideal hexagonal lattice. As a consequence of the deformed crystal structure and the iconicity of the Sc–N bond, we predict a change in value of the elastic coefficient C33ScAlN(x), the piezoelectric coefficient e33ScAlN(x), and the value of spontaneous polarization PSPScAlN(x) of up to 65%, 150%, and 230%, respectively. Based, on these simulation results, physical features of practical use are derived, like the average bulk, shear, and the Young modulus as well as the reciprocal Young's modulus and Poisson ratio. Furthermore, the spontaneous polarization of ScxAl1−xN is approximated, taking nonlinear effects into account as well as the piezoelectric polarization caused by uniaxial, biaxial, and hydrostatic stresses in dependency on alloy composition and strain. A detailed comparison of the structural and polarization related properties of GaAlN and InAlN allows us to point out the peculiarity of wurtzite ScAlN crystals within the group III-nitrides.

show abstract

Energy harvesting based on piezoelectric AlN and AlScN thin films deposited by high rate sputtering

Cited by 6 publications

References 12 publications

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition

Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties

Contact Info

Product

Resources

About