Energy-Harvesting Circuits With a High-Efficiency Rectifier and a Low Temperature Coefficient Bandgap Voltage Reference

Lee, Shuenn-Yuh; Liao, Zhan-Xian; Lee, Chih‐Hung

doi:10.1109/tvlsi.2019.2908670

Cited by 23 publications

(8 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From Table 3, it can be seen that the proposed curvature‐compensated voltage reference has higher FOM 1 and FOM 2 than the existing voltage references 3,6,9,15,30,33,41,43 . Further, it has also been observed that the proposed voltage reference has higher PSRR and lowline sensitivity as compared with the other state‐the‐of‐art solutions.…”

Section: Simulation Resultsmentioning

confidence: 82%

“…The variation of reference voltage over the operating temperature range is known as temperature coefficient, which is the most important performance parameter among all the performance parameters of voltage reference such as power supply rejection ratio (PSRR), line sensitivity, and noise. Modern VLSI circuits require a reference voltage with low‐temperature coefficient in order to fulfill the need of rapidly growing market of portable biomedical instruments, mobile applications, and energy harvesting systems 8,9 …”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

Thakur

Pandey

Kumar

2020

Circuit Theory & Apps

View full text Add to dashboard Cite

Summary A high‐order curvature‐compensated subthreshold voltage reference is proposed in this paper. The proposed curvature‐compensated voltage reference consists of two supply‐independent first‐order voltage references and a curvature compensation circuit. The supply‐independent first‐order voltage reference uses a negative feedback loop which improves the line sensitivity and eliminates the demand of operational amplifier, whereas the curvature compensation circuit provides high‐order temperature‐compensated output reference voltage. The proposed curvature‐compensated voltage reference provides an output reference voltage of 118.54 mV with a temperature coefficient of 21.5 ppm/°C over a wide temperature range of −60°C to 120°C. The power supply rejection ratio and line sensitivity are observed as −68.64 dB (for the frequency range of 1 Hz to 100 Hz) and 0.035%/V (for the supply voltage varies from 0.85 V to 2.5 V), respectively. The values of output noise at the frequencies of 1 kHz and 10 kHz without using any capacitive filter are obtained as 179.13 nV/ √ Hz and 123.87 nV/ √ Hz, respectively.

show abstract

Section: Simulation Resultsmentioning

confidence: 82%

Section: Introductionmentioning

confidence: 99%

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

Thakur

Pandey

Kumar

2020

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…The structure is cascaded to get a higher output voltage. A low temperature coefficient bandgap voltage reference along with a high efficiency rectifier is reported in [10]. A curvature compensation technique is also proposed and the final PCE of 87.2% is achieved.A low power CMOS full bridge rectifier with four transistors at 130 nm technology is presented in [11].…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of a Modified TG Rectifier with Substrate Voltage Compensation Techniques at 45 nm Technology for High Frequency Low Power RF Energy Harvesting

Sarma

2020

Wseas Transactions on Electronics

View full text Add to dashboard Cite

- The development of latest generation of wireless communication standards in the recent years has created enormous possibility to deploy high speed wireless network throughout the globe. There is always demand for high speed, seamless data connectivity. But it is a well-known fact that the increase in speed always makes the power consumption higher. Also while attempting to cater to the need of connectivity to a remote location, the major bottleneck is the availability of power. Hence incorporating self-sustainability to a wireless network is becoming the need of the hour. Radio frequency (RF) energy harvesting (EH) is gaining much attention in contemporary communications in this context. In the design of an EH system, the high frequency rectifier plays a significant role. Apart from several design hurdles that exist in a high frequency rectifier, to attain a high percentage conversion efficiency (PCE) at lower input power is the primary design challenge. This paper presents a design of a modified transmission gate (TG) based high frequency rectifier with two substrate voltage compensation techniques, viz. capacitor and MOS based compensation for RF EH system.The proposed capacitor and MOS based techniques enable the rectifier to achieve a PCE upto 86% and 92% at -5dBm respectively in its single stage implementation. This can be claimed to be the highest in-class efficiency as compared to recently published works. The frequency responses with both the techniques depict a wide band performance covering all popular wireless bands. The dynamic power dissipations (DPD) observed are 12nW and 16nW at -5dB, whereas the leakage power (LP) is 20x10-51W and zero respectively. Further such an performance are obtained using minimal number of transistors, viz. 4 and 5 respectively.

show abstract

“…The structure is cascaded to get a higher output voltage. A low tem perature coefficient bandgap voltage reference along with a high efficiency rectifier is reported in [ 10]. A curvature compensation technique is also propos ed and the final PCE of 87.2% is achieved.A low power CMOS full bridge re ctifier with four transistors at 130 nm technology is presented in [ 11].…”

Section: Introductionmentioning

confidence: 99%

A 3-Transistor Low Power Rectifier for Wideband RF Energy Harvesting with a Threshold Voltage Compensation Technique using 45 nm Technology

Sarma

2020

Wseas Transactions on Circuits and Systems

View full text Add to dashboard Cite

With the advent of modern wireless communication technology and increasing requirement of high speed network, network life-time is becoming a major area of concern. The need of network power management is gaining attention with the high data network in place and is making a paradigm shift towards green communication. Hence embedding the RF energy harvesting (EH) capability in a wireless network is becoming inevitable. To make RF EH a reality a high frequency rectifier is indeed indispensable along with other circuits in the system. The RF energy needs to be harvested from the available sources in the ambience. It is also seen that the current generation of RF sources radiates at a very low signal power. So, to successfully convert and store this energy, the rectifier must not only be able to provide a sufficiently higher percentage conversion ratio (PCE) but also be able to cater it at a lower range of signal power. This paper presents the design and analysis of a simplified 3-transistor high frequency rectifier. A threshold voltage compensation technique is also incorporated and it achieves a PCE upto 85% at -2dBm in its single stage implementation. This is observed to be one of the highest in-class efficiency as compared to recently reported designs. From the frequency response it is seen to exhibit wide band performance spanning almost all popular wireless bands. The dynamic power dissipation (DPD) is calculated to be 6.25pW at -2dB, whereas the leakage power (LP) is observed to be zero.

show abstract

Energy-Harvesting Circuits With a High-Efficiency Rectifier and a Low Temperature Coefficient Bandgap Voltage Reference

Cited by 23 publications

References 13 publications

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

Low temperature coefficient and low line sensitivity subthreshold curvature‐compensated voltage reference

Design and Analysis of a Modified TG Rectifier with Substrate Voltage Compensation Techniques at 45 nm Technology for High Frequency Low Power RF Energy Harvesting

A 3-Transistor Low Power Rectifier for Wideband RF Energy Harvesting with a Threshold Voltage Compensation Technique using 45 nm Technology

Contact Info

Product

Resources

About