1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)
DOI: 10.1109/edmo.1999.821501
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Energy propagation properties of Al-lossy lines in high-speed circuits on silicon substrate

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Cited by 4 publications
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“…The complex dielectric function of Ti and a-Si is obtained using the Johnson and Christy model and the data are taken from [17]. The dielectric constants of SiO 2 and Si 3 N 4 are chosen as 3.9 [18] and 7.4 [19], respectively. The periodic conditions are applied for the duplication of unit cells in the x and y directions.…”
Section: Introductionmentioning
confidence: 99%
“…The complex dielectric function of Ti and a-Si is obtained using the Johnson and Christy model and the data are taken from [17]. The dielectric constants of SiO 2 and Si 3 N 4 are chosen as 3.9 [18] and 7.4 [19], respectively. The periodic conditions are applied for the duplication of unit cells in the x and y directions.…”
Section: Introductionmentioning
confidence: 99%
“…The coupling between SPPs and LSPRs resulting in extraordinary optical behaviours like EOT [9][10][11][12]. The behaviour of EOT strongly depends on shapes, sizes, hole arrangements, and dielectrics [13][14][15][16][17], which provide us with the opportunity to design novel plasmonic nanostructures to manipulate light at the nanoscale.…”
Section: Introductionmentioning
confidence: 99%