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Recent progress in the investigation of the material parameters of Al/Al2O3systems leads to an increase in the possibilities for using embedded TaOXN1‐X layers. The use of Al‐sheets as mechanical strength carriers in combination with vacuum‐deposited Al‐layers and electrochemically anodized Al2O3 structure requires study. This was found to create a periodic multilayer Al/Al2O3 structure. The material qualities of this system allow optimization in order to achieve high speed data processing and signal propagation. The existing studies using Al and Ta combination as well as the high resistance qualities of the modified TaOXN1‐X layers have shown satisfactory results. It can be concluded that the development of this new layer combination is possible in the multilayer carrier structures. Some preliminary research studies show a proper adhesion and satisfactory characteristics of the two integrated resistive planes in the multilayer combination Al/Al2O3//TaOXN1‐X/Ta2O5/Al.

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Subject of the paper is the simultaneous variation of the electrical and rheological properties of vacuum deposited thin layers on flexible substrates and on textile substrates: fiber, threads and fabric, different foils. The aim of the study is oriented to establish the optimal technological regime and the selection of appropriate combinations of thin layers and flexible substrate in view auf the microelectronic technologies. Tasks of the work, beyond the trivial activities include: selection of textile substrates of natural origin and substances for thin films; planned experiment of the vacuum deposition of thin films on textile substrates; microscopy and testing of the mechanical reaction and electrical conductivity of laboratory samples in complex deformation.