2008 31st International Spring Seminar on Electronics Technology 2008
DOI: 10.1109/isse.2008.5276622
|View full text |Cite
|
Sign up to set email alerts
|

Properties study of the heterostructure CdS — CdO

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
2
0

Year Published

2019
2019
2020
2020

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 4 publications
0
2
0
Order By: Relevance
“…3(b), which consisted of 412.46 eV (Cd-S), 411.86 eV (Cd-O), 405.66 eV (Cd-S), and 405.26 eV (Cd-O). [29,30] The appearance of Cd-O may be due to the surface oxidation of CdS QDs in air. S 2p peak is fitted with three peaks as shown in Fig.…”
Section: -3mentioning
confidence: 99%
“…3(b), which consisted of 412.46 eV (Cd-S), 411.86 eV (Cd-O), 405.66 eV (Cd-S), and 405.26 eV (Cd-O). [29,30] The appearance of Cd-O may be due to the surface oxidation of CdS QDs in air. S 2p peak is fitted with three peaks as shown in Fig.…”
Section: -3mentioning
confidence: 99%
“…), as well as having a forbidden energy gap of a value that made it with an amount ranging between (2.16-2.6) ev, it can be used as a transparent conductive material and a thin film in many practical applications and different technological industries [3]. One of the advantages of this material is its ease of preparation in the form of thin films with good specifications of its chemical solutions and its absorption coefficient is high and thus can be used primarily in solar systems to increase their efficiency and in photovoltaic cells as well as in commercial coating systems as a Coating Substance [4,5], and there are several methods for preparing (TCO), including the method of chemistry of elemental vapor deposition (CVD) [6], the method of atomization [7], the method of vaporization [8] and the method of chemical decomposition [9,10]…”
mentioning
confidence: 99%