Energy resolved emission microscopy

Bruce, Victoria J.

doi:10.1109/relphy.1993.283327

Cited by 3 publications

(3 citation statements)

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“…In order to extend the capabilities of the method with respect to spectrally resolved measurements, bandpass ater arrangements (Dallmann and Deboy 1990, Ishizuka et al 1990, Wallinger 1991, Bruce 1993 or a prism as a microscope extension @e Kort and Damink 1990) have been introduced. The emitted light of the investigated phenomenon is optically imaged, amplified and digitized, and the different processes that occur must be taken into account.…”

Section: Spectral Analysis: Experimental Aspectsmentioning

confidence: 99%

“…All spectra shown here were corrected in this way. Alternative calibration procedures have been proposed by De Kort and Damink (1990), Baker (1991) and Bruce (1993). The advantage of emission microscopy is that it offers the option of spectrally resolved measurements without losing lateral resolution.…”

Section: Spectral Analysis: Experimental Aspectsmentioning

confidence: 99%

“…The purpose of spectrally resolved measurements is to come to a better understanding of the fundamentals of light emission from silicon divices and to achieve more specific device characteristics with regard to operating conditions and failure mechanisms (Herzog and Koch 1988, De Kort and Damink 1990, Ishizuka et al 1990, Wallinger 1991, Kolzer et al 1992, Bruce 1993. As the basic emission mechanisms have been controversially discussed in the literature from a theoretical point of view.…”

Section: Spectrally Resolved Measurementsmentioning

confidence: 99%

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Fundamentals of light emission from silicon devices

Deboy

Kölzer

1994

Semicond. Sci. Technol.

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The fundamentals of light-emitting phenomena from silicon semiconducting material are presented from an experimental rather than a theoretical point of view. The following aspects are considered in detail. In the first place, laterally resolved measurements give information about the distribution of emitted light, which has been generated by an excited radiative system. Secondly, spectrally resolved experiments enable a distinction to be made between different current transport mechanisms and permit discussion of underlying physical concepts. Thirdly, some fundamental emission mechanisms are discussed on the basis of the dependency of the electroluminescence intensity on such external parameters as temperature and current. Finally, the applicability of these mechanisms with respect to reliability physics, design verification and failure.analysis of semiconducting'devices is outlined and the state of the art of emission microscopy is reviewed.

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Section: Spectral Analysis: Experimental Aspectsmentioning

confidence: 99%

Section: Spectral Analysis: Experimental Aspectsmentioning

confidence: 99%

Section: Spectrally Resolved Measurementsmentioning

confidence: 99%

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Fundamentals of light emission from silicon devices

Deboy

Kölzer

1994

Semicond. Sci. Technol.

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Sub-0.25um MOSFET impact ionization and photon generation dynamics based on high-resolution photo-emission spectrum analysis

Muniandy¹

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320)

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High-resolution photon emission ~ spectromehy has been employed to study impact ionization and photon generation dynamics in deep sub-micron MOSFET. Physical impact ionization -indirect band-gap recombination model, which is in good agreement with the broadband spectrum properties, has been developed. Abrupt change to photon emission spectrum profile at l.8eV has heeu attributed to energy -momentum, conservation requirements during impact ionization. The abrupt changes in photon intensity with respect to photon energy need to he accounted in electron population and electron mean free path derivation, using photoemission methods. SUMMARYUtilization of spectral analysis of transistor emission to understand impact ionization and emission process in saturated transistors has been done by several researchen [I] -[6]. However, the previous set-up used limits the information gathered on the spectrum. In our set-up, we used a high-resolution spectrum analysis method. .The popular bremsstrahlung model [I], [6], [7], i s not adequate to explain the energy profile of the spectrum collected in this manner.

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Determination of Intrinsic Spectra from Frontside & Backside Photon Emission Spectroscopy

Tan

Toh

Chan

et al. 2007

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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Energy resolved emission microscopy

Cited by 3 publications

References 5 publications

Fundamentals of light emission from silicon devices

Fundamentals of light emission from silicon devices

Sub-0.25um MOSFET impact ionization and photon generation dynamics based on high-resolution photo-emission spectrum analysis

Determination of Intrinsic Spectra from Frontside & Backside Photon Emission Spectroscopy

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Energy resolved emission microscopy

Cited by 3 publications

References 5 publications

Fundamentals of light emission from silicon devices

Fundamentals of light emission from silicon devices

Sub-0.25um MOSFET impact ionization and photon generation dynamics based on high-resolution photo-emission spectrum analysis

Determination of Intrinsic Spectra from Frontside &amp; Backside Photon Emission Spectroscopy

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Determination of Intrinsic Spectra from Frontside & Backside Photon Emission Spectroscopy