2015
DOI: 10.1134/s1027451015020287
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Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation

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Cited by 17 publications
(7 citation statements)
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“…This connection was more pronounced in photocells having a low dopant concentration with the formation of low energy levels. For example, on heat-treated photocells, impurities in the original silicon (boron or phosphorus), which form small energy levels, go into the compensation position [28][29][30][31]. As a result of interaction with impurities that form deep energy levels, the values of U o.c.v.…”
Section: Experimental Results and Their Discussionmentioning
confidence: 99%
“…This connection was more pronounced in photocells having a low dopant concentration with the formation of low energy levels. For example, on heat-treated photocells, impurities in the original silicon (boron or phosphorus), which form small energy levels, go into the compensation position [28][29][30][31]. As a result of interaction with impurities that form deep energy levels, the values of U o.c.v.…”
Section: Experimental Results and Their Discussionmentioning
confidence: 99%
“…For large factories of hoisting and transport equipment, such metal savings could be 2000 tons per year, which is equivalent to an additional production of 100 cranes [43][44][45][46][47][48][49][50][51][52][53][54][55][56][57].…”
Section: Discussionmentioning
confidence: 99%
“…In recent years, we have used implantation of Ba + ions into CdTe and CdS [11,12] to obtain doped single crystalline layers and Cd 1 -x Ba x Te and Cd 1 -x Ba x S surface and subsurface layers. Earlier, analogous two-and three-component nanostructures were obtained by ion implantation on the surfaces of Si, GaAs, and SiO 2 [13][14][15]. Results of these investigations showed that the electron-band parameters, electron emission, and optical properties of these structures depend on their composition (x) and nanostructure dimensions.…”
mentioning
confidence: 95%
“…Single crystals and films of A 2 B 6 semiconductor compounds, in particular CdS, and related multilayer heterostructures are widely used for the creation of various micro-, nano-, and optoelectronic devices, including those for solar power engineering [1][2][3][4]. At present, the influence of heat treatments, laser annealing, microwave processing, and the ion and electron bombardment on the structure, composition, and optical properties of A 2 B 6 compounds and the process of atomic interdiffusion at the interfaces of multilayer systems based on these semiconductors have been thoroughly studied [5][6][7][8][9][10][11][12][13]. In recent years, we have used implantation of Ba + ions into CdTe and CdS [11,12] to obtain doped single crystalline layers and Cd 1 -x Ba x Te and Cd 1 -x Ba x S surface and subsurface layers.…”
mentioning
confidence: 99%