Energy transfer into the growing film during sputter deposition: An investigation by calorimetric measurements and Monte Carlo simulations

Abstract

Experiment and simulation of the compositional evolution of Ti-B thin films deposited by sputtering of a compound target Radio frequency magnetron sputtering deposition of calcium phosphate coatings: Monte Carlo simulations of the deposition process and depositions through an apertureThe power density at the substrate during sputter deposition was measured by a calorimetric method. In combination with measurements of the atomic deposition rate, the total amount of the energy input per incorporated atom was determined. The measured values range from 18 eV for aluminum to about 1000 eV maximum per atom for carbon. There is, for all elements investigated, a general trend for a linear increase of the energy per atom with increasing sputtering argon pressure over the range from 0.2 to 7 Pa. The energy per atom decreases with increasing power of the sputtering discharge. The application of a negative bias to the substrate reduces the total energy per atom to the values measured at low pressure of 0.4 Pa or below. The total energy flux in the low pressure range ͑0.4 Pa or less͒ can be well described by contributions due to plasma irradiation, the heat of condensation of the deposited atoms, their kinetic energy, and the kinetic energy of the reflected argon neutrals. The latter two components are a priori calculated by TRIM.SP Monte Carlo simulations. There is good agreement between the a priori calculated and the measured values. The combination of experimental and theoretical data result in empirical rules for the energies of the sputtered and reflected species, which allow an estimate of the energy input during sputter deposition for every elemental target material in the low pressure range. In a first approximation, the energy per incorporated atom is proportional to the ratio between target atomic mass and sputtering yield.

Effects of spacer layer on growth, stress and magnetic properties of sputtered permalloy film

“…We assume that the energy flux into the growing film is mainly due to the kinetic energy of reflected neutrals and ejected target atoms, the heat of condensation and the plasma irradiation [8]. This energy flux can cause residual stress in sputtered films which may depend strongly on gas pressure during deposition.…”

The fictional transition of the preferential orientation of yttria-stabilized zirconia thin films

“…As demonstrated in Fig. 2c, the increase of the gas pressure from 0.5 to 0.95 Pa increases the total energy per deposited atom [27,28,29]. This effect can be understood from the almost constant energy flux and the lowering of the deposition rate.…”

Investigations of temperature and power effects on Cu(In,Ga)Se2 thin‐film formation during a 3‐stage hybrid co‐sputtering/evaporation process

“…In a typical co‐evaporation process, the crystallization of compounds depends on substrate temperature. However, in a sputtering process, this crystallization and therefore the growth of the layers are a function of the deposition process temperature, of the argon pressure, as well as other factors, such as the power applied to the target . Thus, in addition to the substrate heating temperature, the energy input generated by the sputter atoms must also be taken into account.…”