Energy Transfers between Er3+ Ions Located at the Two Crystalographic Sites of Er2O3 Grown on Si(111)

Omi, Hiroo; Tawara, Takehiko

doi:10.1143/jjap.51.02bg07

Cited by 14 publications

(6 citation statements)

References 14 publications

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“…5, the Stark split manifolds in the crystalline environment overlap, which makes the PL band broad. [22][23][24][25] The point group of Eu 2þ sites in Eu 2 SiS 4 has C S symmetry. 21) In such low-symmmetry sites, the Stark manifolds of Er 3þ are separated.…”

Section: Thiosilicate Phosphors On Si Substratesmentioning

confidence: 99%

Luminescence Properties of Rare-Earth-Doped Thiosilicate Phosphors on Silicon Substrate

Nanai

Sakamoto

Okuno

2013

Jpn. J. Appl. Phys.

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The luminescence properties of rare-earth-doped thiosilicate phosphors are reported. These thiosilicate materials are fabricated in phosphor layers on silicon substrates. For Eu2+-doped calcium thiosilicate, yellow (560 nm) and red (650 nm) bands are obtained in the photoluminescence spectrum, which is almost the same as that for the corresponding powder sample. The energy transfer efficiency from Eu2+ to Er3+ in Eu2SiS4:Er3+ on Si substrates is improved by optimization of the annealing conditions. In addition, the insulation of electroluminescence devices using BaSi2S5:Eu2+ on silicon-on-insulator substrates is improved using a high-dielectric-constant polymer as a transparent insulating layer.

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Section: Thiosilicate Phosphors On Si Substratesmentioning

confidence: 99%

Luminescence Properties of Rare-Earth-Doped Thiosilicate Phosphors on Silicon Substrate

Nanai

Sakamoto

Okuno

2013

Jpn. J. Appl. Phys.

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“…Therefore, Er-based materials are very promising as a platform of STIRAP, and we are focusing in particular on epitaxial erbium oxide (Er 2 O 3 ) thin films. [3] We have three reasons for this:…”

Section: Characteristics Of Rare-earth Materialsmentioning

confidence: 99%

Rare-earth Epitaxial Films as a Platform for Quantum Information Manipulation

Tawara,

Omi

2014

NTT Technical Review

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Rare-earth ions in a solid form have discrete energy levels peculiar to the ionic species, and they are therefore expected to become an excellent platform material for quantum information manipulation. A promising candidate for this purpose is rare-earth epitaxial film such as erbium oxide (Er 2 O 3 ) film grown on a silicon substrate. This article describes the high-quality crystal growth and excellent optical characteristics of Er 2 O 3 epitaxial films for quantum information devices.

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“…Thus, proper material and surface engineering of Er 2 O 3 can potentially tune the band alignment of heterostructures, leading to improved broad-spectrum response. Numerous Er 2 O 3 -based structures (mostly on Si-substrates) have been developed using various techniques, including radio-frequency (RF) magnetron sputtering [16][17][18]. The related morphological, structural, optical, dielectric, electrical properties, thermal stability, etc, have also been immensely studied.…”

Section: Introductionmentioning

confidence: 99%

Staggered band alignment of n-Er₂O₃/p-Si heterostructure for the fabrication of a high-performance broadband photodetector

Ghosh,

Wadhwa,

Shivani

et al. 2024

Nano Ex.

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The low responsivity of conventional Silicon photodiodes in ultraviolet and near-infrared regimes restricts their utility as broadband photodetectors (BBPDs). Despite ongoing investigations into various p-n heterostructures for Silicon-based BBPDs, challenges such as high dark current (Idark), low collection efficiency, low detectivity, and compatibility issues with large-scale Silicon-based devices persist. In this context, we have fabricated relatively unexplored n-Er2O3/p-Si heterojunction-based BBPDs. Polycrystalline Er2O3 thin films (∼110 nm) were deposited on p-Si 〈100〉 substrates by radio frequency magnetron sputtering. Although this process induces a microstrain of approximately 0.022 and a dislocation density of about 0.00303/nm2, the presence of optically active defects is minimal, indicated by a low Urbach energy (∼0.35 eV). X-ray photoelectron spectroscopy (XPS) analysis confirms staggered band alignment at the heterointerface, facilitating efficient charge carrier separation and transport. Consequently, the In/p-Si/n-Er2O3/In device demonstrated significant BBPD properties– low Idark ∼0.15 μA (at +5 V), photo-to-dark current ratio (PDCR) ∼6.5 (at +5 V, 700 nm) with a maximum photoresponsivity ∼22.3 A W−1, and impressive detectivity (∼1013 Jones) even in UV-C region where traditional silicon-based photodetectors respond feebly. The device also demonstrates transient photo-response across an ultrawide spectrum (254 nm–1200 nm) with a fast rise time/fall time ∼79 ms/∼86 ms (at −5 V for 600 nm illumination). This work establishes a straightforward and reliable method for proper material engineering, surface texturing, staggered heterojunction formation, and high-performance BBPD fabrication with prominent broad-spectrum responsivity, sizeable detectivity, and fast response. The integration of these BBPDs with Silicon opens possibilities for their use in electronic devices containing optical switches for communications and broadband image sensors, enhancing their utility in various applications.

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Energy Transfers between Er³⁺ Ions Located at the Two Crystalographic Sites of Er₂O₃ Grown on Si(111)

Cited by 14 publications

References 14 publications

Luminescence Properties of Rare-Earth-Doped Thiosilicate Phosphors on Silicon Substrate

Luminescence Properties of Rare-Earth-Doped Thiosilicate Phosphors on Silicon Substrate

Rare-earth Epitaxial Films as a Platform for Quantum Information Manipulation

Staggered band alignment of n-Er₂O₃/p-Si heterostructure for the fabrication of a high-performance broadband photodetector

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Energy Transfers between Er3+ Ions Located at the Two Crystalographic Sites of Er2O3 Grown on Si(111)

Cited by 14 publications

References 14 publications

Luminescence Properties of Rare-Earth-Doped Thiosilicate Phosphors on Silicon Substrate

Luminescence Properties of Rare-Earth-Doped Thiosilicate Phosphors on Silicon Substrate

Rare-earth Epitaxial Films as a Platform for Quantum Information Manipulation

Staggered band alignment of n-Er2O3/p-Si heterostructure for the fabrication of a high-performance broadband photodetector

Contact Info

Product

Resources

About

Energy Transfers between Er³⁺ Ions Located at the Two Crystalographic Sites of Er₂O₃ Grown on Si(111)

Staggered band alignment of n-Er₂O₃/p-Si heterostructure for the fabrication of a high-performance broadband photodetector