Engineered interface states and optical absorption of β-Ga<sub>2</sub>O<sub>3</sub>/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles

Zhang, Xiaoning; Liang, Xi; Dong, Haoyu; Yang, Jia-Yue; Liu, Linhua

doi:10.1039/d3tc04768g

J. Mater. Chem. C

2024

DOI: 10.1039/d3tc04768g

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Engineered interface states and optical absorption of β-Ga₂O₃/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles

Xiaoning Zhang,

Xi Liang,

Haoyu Dong

et al.

Abstract: Designing high-performance β-Ga2O3/4H-SiC heterojunctions has been widely investigated in recent years due to their unique applications in photodectors. Due to the low defect formation energy of oxygen vacancies, β-Ga2O3-based heterojunction...

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How do oxygen vacancies affect carrier transport and interface states in β-Ga₂O₃/4H-SiC heterojunction photodetectors at elevated temperatures?

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Engineered interface states and optical absorption of β-Ga₂O₃/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles

Abstract: Designing high-performance β-Ga2O3/4H-SiC heterojunctions has been widely investigated in recent years due to their unique applications in photodectors. Due to the low defect formation energy of oxygen vacancies, β-Ga2O3-based heterojunction...

Cited by 3 publications

References 35 publications

Advancements in Ga2O3-based heterojunction ultraviolet photodetectors: Types, fabrication techniques, and integrated materials for enhancing photoelectric conversion efficiency

Advancements in Ga2O3-based heterojunction ultraviolet photodetectors: Types, fabrication techniques, and integrated materials for enhancing photoelectric conversion efficiency

Enhanced charge transfer across the dual interface of Ga2O3@TiO2/Ti3C2 heterojunction for self-powered deep-ultraviolet photodetector

How do oxygen vacancies affect carrier transport and interface states in β-Ga₂O₃/4H-SiC heterojunction photodetectors at elevated temperatures?

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Engineered interface states and optical absorption of β-Ga2O3/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles

Abstract: Designing high-performance β-Ga2O3/4H-SiC heterojunctions has been widely investigated in recent years due to their unique applications in photodectors. Due to the low defect formation energy of oxygen vacancies, β-Ga2O3-based heterojunction...

Cited by 3 publications

References 35 publications

Advancements in Ga2O3-based heterojunction ultraviolet photodetectors: Types, fabrication techniques, and integrated materials for enhancing photoelectric conversion efficiency

Advancements in Ga2O3-based heterojunction ultraviolet photodetectors: Types, fabrication techniques, and integrated materials for enhancing photoelectric conversion efficiency

Enhanced charge transfer across the dual interface of Ga2O3@TiO2/Ti3C2 heterojunction for self-powered deep-ultraviolet photodetector

How do oxygen vacancies affect carrier transport and interface states in β-Ga2O3/4H-SiC heterojunction photodetectors at elevated temperatures?

Contact Info

Product

Resources

About

Engineered interface states and optical absorption of β-Ga₂O₃/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles

How do oxygen vacancies affect carrier transport and interface states in β-Ga₂O₃/4H-SiC heterojunction photodetectors at elevated temperatures?